Datasheet IRG4PH50UDPbF (Infineon) - 7
| 制造商 | Infineon |
| 描述 | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| 页数 / 页 | 11 / 7 — Fig. 14. Fig. 15. Fig. 16. Fig. 17 |
| 修订版 | 01_00 |
| 文件格式/大小 | PDF / 693 Kb |
| 文件语言 | 英语 |
Fig. 14. Fig. 15. Fig. 16. Fig. 17
该数据表的模型线
文件文字版本
IRG4PH50UDPbF 300 40 V = 200V R V = 200 V R T = J 125°C T = 125°C J T = J 25°C T J = 25°C 30 200 I = 32A F ) s) A I = 16A F ( I F = 3 2 A 20 I = 8.0A trr - (n F RRMI - I = F 16 A 100 I F = 8 .0A 10 0 0 100 1000 100 1000 d if /dt - (A/µs) di f /dt - (A /µs)
Fig. 14
- Typical Reverse Recovery vs. dif/dt
Fig. 15
- Typical Recovery Current vs. dif/dt 1200 1000 V = 200V R T = V = 200V J 125°C R T = T = J 125°C J 25°C T = J 25°C 900 I = 32A F s) /µ nC ( 600 I = 16A F 100 /dt - (A - RR I = 32A F Q c)M I = 8.0A I F =16A F di(re I = 8.0A F 300 0 10 100 1000 100 1000 di f /dt - (A/µ s) di f /dt - (A /µs)
Fig. 16
- Typical Stored Charge vs. dif/dt
Fig. 17
- Typical di(rec)M/dt vs. dif/dt www.irf.com 7
Fig. 14
- Typical Reverse Recovery vs. dif/dt
Fig. 15
- Typical Recovery Current vs. dif/dt 1200 1000 V = 200V R T = V = 200V J 125°C R T = T = J 125°C J 25°C T = J 25°C 900 I = 32A F s) /µ nC ( 600 I = 16A F 100 /dt - (A - RR I = 32A F Q c)M I = 8.0A I F =16A F di(re I = 8.0A F 300 0 10 100 1000 100 1000 di f /dt - (A/µ s) di f /dt - (A /µs)
Fig. 16
- Typical Stored Charge vs. dif/dt
Fig. 17
- Typical di(rec)M/dt vs. dif/dt www.irf.com 7