Datasheet K857PE (Vishay) - 2
| 制造商 | Vishay |
| 描述 | 4-Quadrant Silicon PIN Photodiode |
| 页数 / 页 | 7 / 2 — K857PE. BASIC CHARACTERISTICS, SINGLE QUADRANT. PARAMETER. TEST … |
| 文件格式/大小 | PDF / 247 Kb |
| 文件语言 | 英语 |
K857PE. BASIC CHARACTERISTICS, SINGLE QUADRANT. PARAMETER. TEST CONDITION. SYMBOL. MIN. TYP. MAX. UNIT. BASIC CHARACTERISTICS
该数据表的模型线
文件文字版本
K857PE
www.vishay.com Vishay Semiconductors
BASIC CHARACTERISTICS, SINGLE QUADRANT
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF - 0.9 1.3 V Reverse dark current VR = 10 V, E = 0 Iro - 1 10 nA VR = 0 V, f = 1 MHz, E = 0 CD - 11 - pF Diode capacitance VR = 3 V, f = 1 MHz, E = 0 CD - 7 - pF Short circuit current Ee = 1 mW/cm2, λ = 850 nm Ik - 8.5 - μA Temperature coefficient of Ira Ee = 1 mW/cm2, VR = 5 V TKIra - 0.15 - %/K Ee = 1 mW/cm2, λ = 850 nm, VR = 5 V Ira 7 8.5 11 μA Reverse light current Ee = 1 mW/cm2, λ = 940 nm, VR = 5 V Ira - 5.7 - μA Angle of half sensitivity ϕ - ± 60 - ° Wavelength of peak sensitivity λp - 840 - nm Range of spectral bandwidth λ0.1 - 690 to 1050 - nm Rise time VR = 10 V, RL = 50 Ω, λ = 830 nm tr - 30 - ns Fall time VR = 10 V, RL = 50 Ω, λ = 830 nm tf - 30 - ns
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) Values per quadrant q (q = 1, 2, 3, 4)
CROSS-TALK SPECIFICATION
Laser illumination (850 nm, 65 μm spot diameter, radiant power 0.7 mW) of center of PD quadrant 1 (q = 1), VR, q = 5 V applied to all quadrants (q = 1, 2, 3, 4)
ILLUMINATED MEASURED PARAMETER TYP. VALUE UNIT
Yes Ira_850_1 100 % No Ira_850_2 0.1 % No Ira_850_3 0.1 % No Ira_850_4 0.05 % Axis Title 1000 10000 V = 10 V R ) (nA 100 1000 rrent u C ine ne ne rk a 10 1st li 2nd l 2nd li 100 everse D R 1 - I ro 0.1 10 50 70 90 110 T - Ambient Temperature (°C) amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.0, 10-Sep-2020
2
Document Number: 80136 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
BASIC CHARACTERISTICS, SINGLE QUADRANT
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF - 0.9 1.3 V Reverse dark current VR = 10 V, E = 0 Iro - 1 10 nA VR = 0 V, f = 1 MHz, E = 0 CD - 11 - pF Diode capacitance VR = 3 V, f = 1 MHz, E = 0 CD - 7 - pF Short circuit current Ee = 1 mW/cm2, λ = 850 nm Ik - 8.5 - μA Temperature coefficient of Ira Ee = 1 mW/cm2, VR = 5 V TKIra - 0.15 - %/K Ee = 1 mW/cm2, λ = 850 nm, VR = 5 V Ira 7 8.5 11 μA Reverse light current Ee = 1 mW/cm2, λ = 940 nm, VR = 5 V Ira - 5.7 - μA Angle of half sensitivity ϕ - ± 60 - ° Wavelength of peak sensitivity λp - 840 - nm Range of spectral bandwidth λ0.1 - 690 to 1050 - nm Rise time VR = 10 V, RL = 50 Ω, λ = 830 nm tr - 30 - ns Fall time VR = 10 V, RL = 50 Ω, λ = 830 nm tf - 30 - ns
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) Values per quadrant q (q = 1, 2, 3, 4)
CROSS-TALK SPECIFICATION
Laser illumination (850 nm, 65 μm spot diameter, radiant power 0.7 mW) of center of PD quadrant 1 (q = 1), VR, q = 5 V applied to all quadrants (q = 1, 2, 3, 4)
ILLUMINATED MEASURED PARAMETER TYP. VALUE UNIT
Yes Ira_850_1 100 % No Ira_850_2 0.1 % No Ira_850_3 0.1 % No Ira_850_4 0.05 % Axis Title 1000 10000 V = 10 V R ) (nA 100 1000 rrent u C ine ne ne rk a 10 1st li 2nd l 2nd li 100 everse D R 1 - I ro 0.1 10 50 70 90 110 T - Ambient Temperature (°C) amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.0, 10-Sep-2020
2
Document Number: 80136 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000