Datasheet IRF6665PbF, IRF6665TRPbF (Infineon) - 5
| 制造商 | Infineon |
| 描述 | Digital Audio MOSFET |
| 页数 / 页 | 10 / 5 — Fig 12. Fig 13. Fig 15a. Fig 14. Fig 15b. Fig 16a. Fig 16b |
| 文件格式/大小 | PDF / 239 Kb |
| 文件语言 | 英语 |
Fig 12. Fig 13. Fig 15a. Fig 14. Fig 15b. Fig 16a. Fig 16b
该数据表的模型线
文件文字版本
IRF6665PbF ) 200 120 Ω Ω m m( I 180 D = 5.0A e e c c n n a a 160 t t T s s J = 125°C i i 100 s s e e 140 R R n n 120 O O e e c T c r J = 125°C r 100 80 u u o o S S - - 80 o o t t - - n n i 60 i T a a J = 25°C r r 60 D D 40 , T ,) J = 25°C n n o Vgs = 10V o 20 ( S S D D 0 R 40 R 4 6 8 10 12 14 16 18 0 2 4 6 8 10 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
On-Resistance vs. Drain Current 15V 50 )J I m D ( y TOP 0.86A g L r 40 V DRIVER 1.3A DS enE BOTTOM 5.0A eh RG D.U.T + cn 30 - VDD al IAS A av 20V VGS A t 0.01 p Ω esl 20 u P
Fig 15a.
Unclamped Inductive Test Circuit elgniS 10 , V (BR)DSS S A t E p 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current IAS
Fig 15b.
Unclamped Inductive Waveforms RD VDS VDS VGS 90% D.U.T. RG +-VDD 10% 10V VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % td(on) t t r d(off) tf
Fig 16a.
Switching Time Test Circuit
Fig 16b.
Switching Time Waveforms www.irf.com 5
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
On-Resistance vs. Drain Current 15V 50 )J I m D ( y TOP 0.86A g L r 40 V DRIVER 1.3A DS enE BOTTOM 5.0A eh RG D.U.T + cn 30 - VDD al IAS A av 20V VGS A t 0.01 p Ω esl 20 u P
Fig 15a.
Unclamped Inductive Test Circuit elgniS 10 , V (BR)DSS S A t E p 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current IAS
Fig 15b.
Unclamped Inductive Waveforms RD VDS VDS VGS 90% D.U.T. RG +-VDD 10% 10V VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % td(on) t t r d(off) tf
Fig 16a.
Switching Time Test Circuit
Fig 16b.
Switching Time Waveforms www.irf.com 5