Datasheet IRF6665PbF, IRF6665TRPbF (Infineon) - 6
| 制造商 | Infineon |
| 描述 | Digital Audio MOSFET |
| 页数 / 页 | 10 / 6 — Fig 17a. Fig 17b. D.U.T. Fig 18 |
| 文件格式/大小 | PDF / 239 Kb |
| 文件语言 | 英语 |
Fig 17a. Fig 17b. D.U.T. Fig 18
该数据表的模型线
文件文字版本
IRF6665PbF Current Regulator Id Same Type as D.U.T. Vds 50KΩ Vgs .2µF 12V .3µF +V D.U.T. DS - VGS Vgs(th) 3mA I I G D Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr
Fig 17a.
Gate Charge Test Circuit
Fig 17b.
Gate Charge Waveform
D.U.T
+ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance - Current Transformer + - + - R VDD G • di/dt controlled by RG • Driver same type as D.U.T. + • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test - Driver Gate Drive P.W. Period D = P.W. Period V * GS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 18.
Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs 6 www.irf.com
Fig 17a.
Gate Charge Test Circuit
Fig 17b.
Gate Charge Waveform
D.U.T
+ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance - Current Transformer + - + - R VDD G • di/dt controlled by RG • Driver same type as D.U.T. + • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test - Driver Gate Drive P.W. Period D = P.W. Period V * GS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 18.
Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs 6 www.irf.com