Datasheet AUIRL7732S2TR (Infineon) - 3
| 制造商 | Infineon |
| 描述 | Automotive Grade. Automotive DirectFET Power MOSFET |
| 页数 / 页 | 11 / 3 — Diode Characteristics. Symbol. Parameter. Min. Typ. Max. Units. Conditions |
| 文件格式/大小 | PDF / 437 Kb |
| 文件语言 | 英语 |
Diode Characteristics. Symbol. Parameter. Min. Typ. Max. Units. Conditions
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AUIRL7732S2TR
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol I D S ––– ––– 58 (Body Diode) showing the A Pulsed Source Current integral reverse G ISM ––– ––– 230 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 35A, VGS = 0V trr Reverse Recovery Time ––– 23 35 ns TJ = 25°C, IF = 35A, VDD = 20V Qrr Reverse Recovery Charge ––– 16 24 nC dv/dt = 100A/µs Surface mounted on 1 in. Mounted to a PCB with Mounted on minimum square Cu board (still air). small clip heatsink (still air) footprint full size board with metalized back and with small clip heatsink (still air). Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET® Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.075mH, RG = 50, IAS = 35A. Pulse width 400µs; duty cycle 2%. Used double sided cooling, mounting pad with large heat sink. Mounted on minimum footprint full size board with metalized back and with small clip heat sink. R is measured at TJ of approximately 90°C. 3 2015-12-11
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol I D S ––– ––– 58 (Body Diode) showing the A Pulsed Source Current integral reverse G ISM ––– ––– 230 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 35A, VGS = 0V trr Reverse Recovery Time ––– 23 35 ns TJ = 25°C, IF = 35A, VDD = 20V Qrr Reverse Recovery Charge ––– 16 24 nC dv/dt = 100A/µs Surface mounted on 1 in. Mounted to a PCB with Mounted on minimum square Cu board (still air). small clip heatsink (still air) footprint full size board with metalized back and with small clip heatsink (still air). Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET® Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.075mH, RG = 50, IAS = 35A. Pulse width 400µs; duty cycle 2%. Used double sided cooling, mounting pad with large heat sink. Mounted on minimum footprint full size board with metalized back and with small clip heat sink. R is measured at TJ of approximately 90°C. 3 2015-12-11