Datasheet AOTL66518 (Alpha & Omega) - 2

AOTL66518 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 150 V VDS=150V, VGS=0V 1 I μA DSS Zero Gate Voltage Drain Current TJ=55°C 5 I Gate-Body leakage current V GSS DS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.7 3.2 3.7 V VGS=10V, ID=20A 3.5 4.3 mΩ RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6.8 8.3 VGS=8V, ID=20A 3.9 5 mΩ g Forward Transconductance V FS DS=5V, ID=20A 50 S V Diode Forward Voltage I SD S=1A, VGS=0V 0.68 1 V IS Maximum Body-Diode Continuous Current 214 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 6460 pF C Output Capacitance V oss GS=0V, VDS=75V, f=1MHz 820 pF Crss Reverse Transfer Capacitance 5 pF Rg Gate resistance f=1MHz 1.1 2.3 3.5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 80 115 nC Q V gs Gate Source Charge GS=10V, VDS=75V, ID=20A 32 nC Qgd Gate Drain Charge 15 nC Qoss Output Charge VGS=0V, VDS=75V 273 nC tD(on) Turn-On DelayTime 27 ns tr Turn-On Rise Time VGS=10V, VDS=75V, RL=3.75W, 20 ns t R D(off) Turn-Off DelayTime GEN=3W 49 ns tf Turn-Off Fall Time 28 ns trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms 86 ns Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 920 nC A. The value of Rq is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The JA A Power dissipation P is based on R t≤ 10s and the maximum allowed junction temperature of 175°C. The value in any given application DSM qJA depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =175°C. J(MAX) D. The Rq is the sum of the thermal impedance from junction to case R and case to ambient. JA qJC E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev.1.0: June 2020 www.aosmd.com Page 2 of 6