Datasheet T1235H-8G (STMicroelectronics) - 3
| 制造商 | STMicroelectronics |
| 描述 | 12 A - 800 V - 150 °C 8H-Triac in D2PAK |
| 页数 / 页 | 12 / 3 — T1235H-8G. Characteristics. Table 3. Static characteristics. Symbol. Test … |
| 文件格式/大小 | PDF / 268 Kb |
| 文件语言 | 英语 |
T1235H-8G. Characteristics. Table 3. Static characteristics. Symbol. Test conditions. Value. Unit. Table 4. Thermal resistance
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T1235H-8G Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) ITM = 17 A, tp = 380 µs 25 °C Max. 1.50 V VTO (1) Threshold voltage 150 °C Max. 0.80 V R (1) D Dynamic resistance 150 °C Max. 32 mΩ 25 °C 2.0 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150°C 4.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 1.7 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 1.1 °C/W Rth(j-a) Junction to ambient (S (1) CU = 2 cm2) Typ. 45 °C/W 1. Scu : copper pad surface under tab, 35 μm copper thickness on FR4 PCB.
DS13429
-
Rev 2 page 3/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history
T1235H-8G Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) ITM = 17 A, tp = 380 µs 25 °C Max. 1.50 V VTO (1) Threshold voltage 150 °C Max. 0.80 V R (1) D Dynamic resistance 150 °C Max. 32 mΩ 25 °C 2.0 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150°C 4.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 1.7 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 1.1 °C/W Rth(j-a) Junction to ambient (S (1) CU = 2 cm2) Typ. 45 °C/W 1. Scu : copper pad surface under tab, 35 μm copper thickness on FR4 PCB.
DS13429
-
Rev 2 page 3/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history