Datasheet T1235H-8I (STMicroelectronics) - 3
| 制造商 | STMicroelectronics |
| 描述 | 12 A -800 V -150°C 8H Triac in TO-220AB insulated |
| 页数 / 页 | 11 / 3 — T1235H-8I. Characteristics. Table 3. Static characteristics. Symbol. Test … |
| 文件格式/大小 | PDF / 288 Kb |
| 文件语言 | 英语 |
T1235H-8I. Characteristics. Table 3. Static characteristics. Symbol. Test conditions. Value. Unit. Table 4. Thermal resistance
该数据表的模型线
文件文字版本
link to page 3 link to page 3 link to page 3
T1235H-8I Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) ITM = 17 A, tp = 380 µs 25 °C Max. 1.50 V VTO (1) Threshold voltage 150 °C Max. 0.80 V R (1) D Dynamic resistance 150 °C Max. 32 mΩ 25 °C 2.0 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150°C 4.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 1.7 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 2.1 °C/W Rth(j-a) Junction to ambient Typ. 60 °C/W
DS13430
-
Rev 2 page 3/11
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB insulated package information 3 Ordering information Revision history
T1235H-8I Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) ITM = 17 A, tp = 380 µs 25 °C Max. 1.50 V VTO (1) Threshold voltage 150 °C Max. 0.80 V R (1) D Dynamic resistance 150 °C Max. 32 mΩ 25 °C 2.0 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150°C 4.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 1.7 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 2.1 °C/W Rth(j-a) Junction to ambient Typ. 60 °C/W
DS13430
-
Rev 2 page 3/11
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB insulated package information 3 Ordering information Revision history