Datasheet T835H-8G (STMicroelectronics) - 3

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T835H-8G Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) ITM = 11 A, tp = 380 µs 25 °C Max. 1.50 V VTO (1) Threshold voltage 150 °C Max. 0.83 V R (1) D Dynamic resistance 150 °C Max. 45 mΩ 25 °C 1.5 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150°C 3.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 1.3 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 1.2 °C/W Rth(j-a) Junction to ambient (S (1) CU = 2 cm2) Typ. 45 °C/W 1. Scu : copper pad surface under tab, 35 μm copper thickness on FR4 PCB.
DS13570
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Rev 2 page 3/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history