Datasheet T835H-8I (STMicroelectronics) - 6
| 制造商 | STMicroelectronics |
| 描述 | 8 A - 800 V - 150°C 8H-Triac in TO-220AB insulated |
| 页数 / 页 | 11 / 6 — T835H-8I. Characteristics (curves) |
| 文件格式/大小 | PDF / 264 Kb |
| 文件语言 | 英语 |
T835H-8I. Characteristics (curves)
该数据表的模型线
文件文字版本
T835H-8I Characteristics (curves) Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage
IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,800 V] 1.0E+00 1.0E-01 VD = VR = 800 V 1.0E-02 VD = VR = 600 V 1.0E-03 1.0E-04 Tj(°C) 1.0E-05 25 50 75 100 125 150
DS13573
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Rev 2 page 6/11
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB insulated package information 3 Ordering information Revision history
IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,800 V] 1.0E+00 1.0E-01 VD = VR = 800 V 1.0E-02 VD = VR = 600 V 1.0E-03 1.0E-04 Tj(°C) 1.0E-05 25 50 75 100 125 150
DS13573
-
Rev 2 page 6/11
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB insulated package information 3 Ordering information Revision history