Datasheet T3035H-8G (STMicroelectronics) - 3
| 制造商 | STMicroelectronics |
| 描述 | 30 A - 800 V - 150°C H-series Triac in D²PAK |
| 页数 / 页 | 12 / 3 — T3035H-8G. Characteristics. Table 3. Static characteristics. Symbol. Test … |
| 文件格式/大小 | PDF / 270 Kb |
| 文件语言 | 英语 |
T3035H-8G. Characteristics. Table 3. Static characteristics. Symbol. Test conditions. Value. Unit. Table 4. Thermal resistance
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T3035H-8G Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) IT = 42 A, tp = 380 µs 25 °C Max. 1.55 V VTO (1) Threshold voltage 150 °C Max. 0.83 V R (1) D Dynamic resistance 150 °C Max. 16 mΩ 25 °C 2.5 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150°C 8.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 3.6 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 0.8 °C/W Rth(j-a) Junction to ambient (S (1) CU = 2 cm²) Typ. 45 °C/W 1. Scu : copper pad surface under tab, 35 μm copper thickness on FR4 PCB.
DS12705
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Rev 5 page 3/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history
T3035H-8G Characteristics Table 3. Static characteristics Symbol Test conditions Tj Value Unit
VTM (1) IT = 42 A, tp = 380 µs 25 °C Max. 1.55 V VTO (1) Threshold voltage 150 °C Max. 0.83 V R (1) D Dynamic resistance 150 °C Max. 16 mΩ 25 °C 2.5 µA VD = VR = VDRM = VRRM Max. IDRM/IRRM 150°C 8.5 mA VD = VR = 400 V, peak voltage 150 °C Max. 3.6 mA 1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) Max. 0.8 °C/W Rth(j-a) Junction to ambient (S (1) CU = 2 cm²) Typ. 45 °C/W 1. Scu : copper pad surface under tab, 35 μm copper thickness on FR4 PCB.
DS12705
-
Rev 5 page 3/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history