Datasheet Si4466DY (Vishay) - 2

Si4466DY
Vishay Siliconix
MOSFET SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.0 1.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 20 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta I ≥ D(on) VDS 5 V, VGS = 4.5 V 30 A VGS = 4.5 V, ID = 13.5 A 0.0055 0.009 Drain-Source On-State Resistancea RDS(on) Ω VGS = 2.5 V, ID = 11 A 0.0078 0.013 Forward Transconductancea gfs VDS = 10 V, ID = 13.5 A 70 S Diode Forward Voltagea VSD IS = 2.7 A, VGS = 0 V 0.70 1.1 V
Dynamicb
Gate Charge Qg 40 60 Gate-Source Charge Q V gs DS = 10 V, VGS = 4.5 V, ID = 13.5 A 7 nC Gate-Drain Charge Qgd 12 Gate Resistance Rg 0.5 1.9 3.3 Ω Turn-On Delay Time td(on) 20 30 Rise Time tr VDD = 10 V, RL = 10 Ω 15 25 I Turn-Off Delay Time td(off) D ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 150 250 ns Fall Time tf 70 110 Source-Drain Reverse Recovery Time trr IF = 2.7 A, dI/dt = 100 A/µs 55 90 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 50 50 VGS = 5 V thru 2.5 V 40 40 30 30 2 V ain Current (A) ain Current (A) 20 20 - Dr - Dr I D I D TC = 125 °C 10 10 25 °C - 55 °C 0 0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
www.vishay.com Document Number: 71820 2 S09-0767-Rev. F, 04-May-09