Datasheet Si4466DY (Vishay) - 4
| 制造商 | Vishay |
| 描述 | N-Channel 2.5-V (G-S) MOSFET |
| 页数 / 页 | 5 / 4 — Si4466DY. TYPICAL CHARACTERISTICS. Threshold Voltage. Single Pulse Power, … |
| 文件格式/大小 | PDF / 85 Kb |
| 文件语言 | 英语 |
Si4466DY. TYPICAL CHARACTERISTICS. Threshold Voltage. Single Pulse Power, Junction-to-Ambient
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Si4466DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.4 200 0.2 160 ID = 250 µA 0.0 120 riance (V) a - 0.2 er (W) V w o P 80 GS(th) - 0.4 V 40 - 0.6 - 0.8 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient e T 0.2 Notes: fectiv 0.1 mal Impedance 0.1 P ed Ef DM Ther 0.05 maliz t1 t2 Nor t1 1. Duty Cycle, D = 0.02 t2 2. Per Unit Base = R thJA = 70 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient e T 0.2 fectiv 0.1 mal Impedance 0.1 ed Ef Ther 0.05 maliz Nor 0.02 Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71820. www.vishay.com Document Number: 71820 4 S09-0767-Rev. F, 04-May-09
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.4 200 0.2 160 ID = 250 µA 0.0 120 riance (V) a - 0.2 er (W) V w o P 80 GS(th) - 0.4 V 40 - 0.6 - 0.8 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient e T 0.2 Notes: fectiv 0.1 mal Impedance 0.1 P ed Ef DM Ther 0.05 maliz t1 t2 Nor t1 1. Duty Cycle, D = 0.02 t2 2. Per Unit Base = R thJA = 70 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient e T 0.2 fectiv 0.1 mal Impedance 0.1 ed Ef Ther 0.05 maliz Nor 0.02 Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71820. www.vishay.com Document Number: 71820 4 S09-0767-Rev. F, 04-May-09