Datasheet BYV26A, BYV26B, BYV26C, BYV26D, BYV26E (Vishay) - 2

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient l = 10 mm, TL = constant RthJA 45 K/W
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IF = 1 A VF - - 2.5 V Forward voltage IF = 1 A, Tj = 175 °C VF - - 1.3 V VR = VRRM IR - - 5 μA Reverse current VR = VRRM, Tj = 150 °C IR - - 100 μA BYV26A V(BR)R 300 - - V BYV26B V(BR)R 500 - - V Reverse breakdown voltage IR = 100 μA BYV26C V(BR)R 700 - - V BYV26D V(BR)R 900 - - V BYV26E V(BR)R 1100 - - V BYV26A trr - - 30 ns BYV26B trr - - 30 ns Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A BYV26C trr - - 30 ns BYV26D trr - - 75 ns BYV26E trr - - 75 ns
TYPICAL CHARACTERISTICS
(Tamb = 25 C, unless otherwise specified) 600 1000 V = V V = V R RRM R RRM 500 R = 45 K/W thJA 100 ipation (mW) R = 100 K/W thJA 400 200 V ss 400 V 300 10 e Current (μA) s 600 V e Power Di s 200 800 V - Rever 1 100 I R 1000 V 0 - Max. Rever 0.1 R 0 40 80 120 160 P 200 0 40 80 120 160 200 959728 T 959729 T j - Junction Temperature (°C) j - Junction Temperature (°C) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Max. Reverse Current vs. Junction Temperature Rev. 1.8, 21-Feb-18
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