Datasheet IRFP450, SiHFP450 (Vishay) - 5
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 11 / 5 — IRFP450, SiHFP450. Fig. 10a - Switching Time Test Circuit. Fig. 9 - … |
| 文件格式/大小 | PDF / 1.6 Mb |
| 文件语言 | 英语 |
IRFP450, SiHFP450. Fig. 10a - Switching Time Test Circuit. Fig. 9 - Maximum Drain Current vs. Case Temperature
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IRFP450, SiHFP450
Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 % 10 % VGS t t t t d(on) r d(off) f
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L VDS VDS Vary t t p to obtain p required IAS VDD R D.U.T G + V - DD VDS I A AS 10 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91233 www.vishay.com S-81271-Rev. A, 16-Jun-08 5
Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 % 10 % VGS t t t t d(on) r d(off) f
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L VDS VDS Vary t t p to obtain p required IAS VDD R D.U.T G + V - DD VDS I A AS 10 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91233 www.vishay.com S-81271-Rev. A, 16-Jun-08 5