Datasheet 2N2907A (Diotec) - 2

2N2907A
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max. -VBEsat 0.6 V
– –
– 1.3 V
2.6 V hFE 75
100
100
100
50 –
–
–
–
– –
–
–
300
– fT 250 MHz – – CCBO – – 8 pF CEBO – – 30 pF Base saturation-voltage – Basis-Sättigungsspannung
-IC = 150 mA, -IB = 15 mA 2)
-IC = 500 mA, -IB = 50 mA 2)
DC current gain – Kollektor-Basis-Stromverhältnis
-IC =
IC =
IC =
IC =
IC = 0.1 mA, -VCE = 10 V
1 mA, -VCE = 10 V
10 mA, -VCE = 10 V
150 mA, -VCE = 10 V 1)
500 mA, -VCE = 10 V 1) Gain-Bandwidth Product – Transitfrequenz
-IC = 20 mA, -VCE = 20 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
-VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capaciance – Emitter-Basis-Kapazität
-VEB = 0.5 V, IC =ic = 0, f = 1 MHz
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – umgebung RthA < 200 K/W 2) 120
[%]
100 80 60 40 20
IFAV
0 0 TT 50 100 150 [°C] Rated forward current vs. temp. of the terminals
Zul. Richtstrom in Abh. v. d. Temp. der Terminals Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1
2 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
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