Datasheet IRF7425PbF (Infineon) - 2
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 9 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| 文件格式/大小 | PDF / 197 Kb |
| 文件语言 | 英语 |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
该数据表的模型线
文件文字版本
IRF7425PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.010 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 8.2 VGS = -4.5V, ID = -15A RDS(on) Static Drain-to-Source On-Resistance mΩ ––– ––– 13 VGS = -2.5V, ID = -13A VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250μA gfs Forward Transconductance 44 ––– ––– S VDS = -10V, ID = -15A ––– ––– -1.0 VDS = -16V, VGS = 0V IDSS Drain-to-Source Leakage Current µA ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V IGSS nA Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 87 130 ID = -15A Qgs Gate-to-Source Charge ––– 18 27 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 21 32 VGS = -4.5V td(on) Turn-On Delay Time ––– 13 ––– VDD = -10V tr Rise Time ––– 20 ––– ID = -1.0A ns td(off) Turn-Off Delay Time ––– 230 ––– RG = 6.0Ω tf Fall Time ––– 160 ––– VGS = -4.5V Ciss Input Capacitance ––– 7980 ––– VGS = 0V Coss Output Capacitance ––– 1480 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 980 ––– ƒ = 1.0kHz
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D ––– (Body Diode) ––– -2.5 showing the A ISM Pulsed Source Current integral reverse G ––– ––– -60 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V trr Reverse Recovery Time ––– 120 180 ns TJ = 25°C, IF = -2.5A Qrr Reverse Recovery Charge ––– 160 240 nC di/dt = -100A/μs
Notes:
Repetitive rating; pulse width limited by Surface mounted on 1 in square Cu board, t ≤ 10sec. max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.010 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 8.2 VGS = -4.5V, ID = -15A RDS(on) Static Drain-to-Source On-Resistance mΩ ––– ––– 13 VGS = -2.5V, ID = -13A VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250μA gfs Forward Transconductance 44 ––– ––– S VDS = -10V, ID = -15A ––– ––– -1.0 VDS = -16V, VGS = 0V IDSS Drain-to-Source Leakage Current µA ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V IGSS nA Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 87 130 ID = -15A Qgs Gate-to-Source Charge ––– 18 27 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 21 32 VGS = -4.5V td(on) Turn-On Delay Time ––– 13 ––– VDD = -10V tr Rise Time ––– 20 ––– ID = -1.0A ns td(off) Turn-Off Delay Time ––– 230 ––– RG = 6.0Ω tf Fall Time ––– 160 ––– VGS = -4.5V Ciss Input Capacitance ––– 7980 ––– VGS = 0V Coss Output Capacitance ––– 1480 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 980 ––– ƒ = 1.0kHz
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D ––– (Body Diode) ––– -2.5 showing the A ISM Pulsed Source Current integral reverse G ––– ––– -60 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V trr Reverse Recovery Time ––– 120 180 ns TJ = 25°C, IF = -2.5A Qrr Reverse Recovery Charge ––– 160 240 nC di/dt = -100A/μs
Notes:
Repetitive rating; pulse width limited by Surface mounted on 1 in square Cu board, t ≤ 10sec. max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013