Datasheet IRF7425PbF (Infineon) - 6
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 9 / 6 — Fig 12. Fig 13. Fig 14a. Fig 14b |
| 文件格式/大小 | PDF / 197 Kb |
| 文件语言 | 英语 |
Fig 12. Fig 13. Fig 14a. Fig 14b
该数据表的模型线
文件文字版本
IRF7425PbF ) 0.015 ) 0.010 Ω( (Ω e c e n c a n t a s t i 0.009 s s i V e se GS = -2.5V R R n n O O 0.008 e e cr cr u 0.010 u o o S- S - o o 0.007 t t - - n n i i a I a r D = -15A r D D , ) 0.006 )n n o o V ( GS = -4.5V S S D D R 0.005 R 0.005 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 50 60 -V -I GS, Gate -to -Source Voltage (V) D , Drain Current (A)
Fig 12.
Typical On-Resistance Vs.
Fig 13.
Typical On-Resistance Vs. Gate Voltage Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG .2μF 12V .3μF - Q V GS QGD D.U.T. + DS VGS VG -3mA I I G D Charge Current Sampling Resistors
Fig 14a.
Basic Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit 6 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Fig 12.
Typical On-Resistance Vs.
Fig 13.
Typical On-Resistance Vs. Gate Voltage Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG .2μF 12V .3μF - Q V GS QGD D.U.T. + DS VGS VG -3mA I I G D Charge Current Sampling Resistors
Fig 14a.
Basic Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit 6 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013