Datasheet IRF7822 (International Rectifier) - 2
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET for DC-DC Converters |
| 页数 / 页 | 6 / 2 — Electrical Characteristics. Parameter. Min. Typ. Max. Units. Conditions. … |
| 文件格式/大小 | PDF / 73 Kb |
| 文件语言 | 英语 |
Electrical Characteristics. Parameter. Min. Typ. Max. Units. Conditions. Source-Drain Rating & Characteristics. Notes:
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文件文字版本
IRF7822
Electrical Characteristics Parameter Min Typ Max Units Conditions
Drain-to-Source BV 30 – – V V = 0V, I = 250µA DSS GS D Breakdown Voltage Static Drain-Source R 5.0 6.5 mΩ V = 4.5V, I = 15AR DS(on) GS D on Resistance Gate Threshold Voltage V 1.0 V V = V ,I = 250µA GS(th) DS GS D Drain-Source Leakage I 30 V = 24V, V = 0 DSS DS GS Current Current* 150 µA V = 24V, V = 0, DS GS Tj = 100°C Gate-Source Leakage I ±100 nA V = ±12V GSS GS Current Total Gate Chg Cont FET Q 44 60 V =5.0V, I =15A, V =16V G GS D DS Total Gate Chg Sync FET Q 38 V = 5.0V, V < 100mV G GS DS Pre-Vth Q 13 V = 16V, I = 15A GS1 DS D Gate-Source Charge Post-Vth Q 3.0 nC GS2 Gate-Source Charge Gate to Drain Charge Q 9.0 GD Switch Chg(Q + Q ) Q 12 gs2 gd sw Output Charge Q 27 V = 16V, V = 0 oss DS GS Gate Resistance R 1.5 Ω G Turn-on Delay Time t 15 V = 16V, I = 15A d (on) DD D Rise Time t 5.5 ns V = 5.0V r GS Turn-off Delay Time t 22 Clamped Inductive Load d (off) Fall Time t 12 f Input Capacitance C – 5500 – iss Output Capacitance C – 1000 – pF V = 16V, V = 0 oss DS GS Reverse Transfer Capacitance C – 300 – rss
Source-Drain Rating & Characteristics Parameter Min Typ Max Units Conditions
Diode Forward V 1.0 V I = 15AR, V = 0V SD S GS Voltage* Reverse Recovery Q 120 nC di/dt ~ 700A/µs rr ChargeT V = 16V, V = 0V, I = 15A DS GS S Reverse Recovery Q 108 nC di/dt = 700A/µs rr(s) Charge (with Parallel (with 10BQ040) Schottky)T V = 16V, V = 0V, I = 15A DS GS S
Notes:
Q Repetitive rating; pulse width limited by max. junction temperature. R Pulse width ≤ 400 µs; duty cycle ≤ 2%. S When mounted on 1 inch square copper board T Typ = measured - Qoss UTypical values of RDS(on) measured at V = 4.5V, Q , Q and Q GS G SW OSS measured at V = 5.0V, I = 15A. GS F 2 www.irf.com
Electrical Characteristics Parameter Min Typ Max Units Conditions
Drain-to-Source BV 30 – – V V = 0V, I = 250µA DSS GS D Breakdown Voltage Static Drain-Source R 5.0 6.5 mΩ V = 4.5V, I = 15AR DS(on) GS D on Resistance Gate Threshold Voltage V 1.0 V V = V ,I = 250µA GS(th) DS GS D Drain-Source Leakage I 30 V = 24V, V = 0 DSS DS GS Current Current* 150 µA V = 24V, V = 0, DS GS Tj = 100°C Gate-Source Leakage I ±100 nA V = ±12V GSS GS Current Total Gate Chg Cont FET Q 44 60 V =5.0V, I =15A, V =16V G GS D DS Total Gate Chg Sync FET Q 38 V = 5.0V, V < 100mV G GS DS Pre-Vth Q 13 V = 16V, I = 15A GS1 DS D Gate-Source Charge Post-Vth Q 3.0 nC GS2 Gate-Source Charge Gate to Drain Charge Q 9.0 GD Switch Chg(Q + Q ) Q 12 gs2 gd sw Output Charge Q 27 V = 16V, V = 0 oss DS GS Gate Resistance R 1.5 Ω G Turn-on Delay Time t 15 V = 16V, I = 15A d (on) DD D Rise Time t 5.5 ns V = 5.0V r GS Turn-off Delay Time t 22 Clamped Inductive Load d (off) Fall Time t 12 f Input Capacitance C – 5500 – iss Output Capacitance C – 1000 – pF V = 16V, V = 0 oss DS GS Reverse Transfer Capacitance C – 300 – rss
Source-Drain Rating & Characteristics Parameter Min Typ Max Units Conditions
Diode Forward V 1.0 V I = 15AR, V = 0V SD S GS Voltage* Reverse Recovery Q 120 nC di/dt ~ 700A/µs rr ChargeT V = 16V, V = 0V, I = 15A DS GS S Reverse Recovery Q 108 nC di/dt = 700A/µs rr(s) Charge (with Parallel (with 10BQ040) Schottky)T V = 16V, V = 0V, I = 15A DS GS S
Notes:
Q Repetitive rating; pulse width limited by max. junction temperature. R Pulse width ≤ 400 µs; duty cycle ≤ 2%. S When mounted on 1 inch square copper board T Typ = measured - Qoss UTypical values of RDS(on) measured at V = 4.5V, Q , Q and Q GS G SW OSS measured at V = 5.0V, I = 15A. GS F 2 www.irf.com