Datasheet STD30PF03LT4, STD30PF03L-1 (STMicroelectronics) - 2
| 制造商 | STMicroelectronics |
| 描述 | P-channel 30 V -0.025 Ω -24 A -DPAK / IPAK STripFET II Power MOSFET |
| 页数 / 页 | 13 / 2 — Electrical ratings. STD30PF03LT4 - STD30PF03L-1. 1 Electrical. ratings. … |
| 文件格式/大小 | PDF / 337 Kb |
| 文件语言 | 英语 |
Electrical ratings. STD30PF03LT4 - STD30PF03L-1. 1 Electrical. ratings. Table 2. Absolute maximum ratings. Symbol. Parameter. Value. Unit
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Electrical ratings STD30PF03LT4 - STD30PF03L-1 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit
VDS Drain-source voltage (VGS=0) 30 V VGS Gate-source voltage ± 16 V I (1) Drain current (continuous) at T D C = 25 °C 24 A I (1) Drain current (continuous) at T D C = 100 °C 24 A I (2) DM Drain current (pulsed) 96 A PTOT Total dissipation at TC=25 °C 70 W Derating factor 0.47 W/°C EAS (3) Single pulse avalanche energy 850 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature 175 °C 1. Current limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting TJ = 25 °C, ID = 12 A, VDD =15 V
Table 3. Thermal data Max value Symbol Parameter Unit DPAK IPAK
Rthj-case Thermal resistance junction-case max 2.14 °C/W Rthj-amb Thermal resistance junction-ambient max -- 100 °C/W Rthj-pcb Thermal resistance junction-pcb max 50(1) -- °C/W Tl Maximum lead temperature for soldering purpose -- 275 °C/W 1. When mounted on FR- 4board of 1 inch². Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed 2/13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On/off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized breakdown voltage vs temperature 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for diode recovery behavior 4 Package mechanical data 5 Packaging mechanical data 6 Revision history Table 8. Document revision history
VDS Drain-source voltage (VGS=0) 30 V VGS Gate-source voltage ± 16 V I (1) Drain current (continuous) at T D C = 25 °C 24 A I (1) Drain current (continuous) at T D C = 100 °C 24 A I (2) DM Drain current (pulsed) 96 A PTOT Total dissipation at TC=25 °C 70 W Derating factor 0.47 W/°C EAS (3) Single pulse avalanche energy 850 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature 175 °C 1. Current limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting TJ = 25 °C, ID = 12 A, VDD =15 V
Table 3. Thermal data Max value Symbol Parameter Unit DPAK IPAK
Rthj-case Thermal resistance junction-case max 2.14 °C/W Rthj-amb Thermal resistance junction-ambient max -- 100 °C/W Rthj-pcb Thermal resistance junction-pcb max 50(1) -- °C/W Tl Maximum lead temperature for soldering purpose -- 275 °C/W 1. When mounted on FR- 4board of 1 inch². Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed 2/13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On/off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized breakdown voltage vs temperature 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for diode recovery behavior 4 Package mechanical data 5 Packaging mechanical data 6 Revision history Table 8. Document revision history