Datasheet STD30PF03LT4, STD30PF03L-1 (STMicroelectronics) - 3
| 制造商 | STMicroelectronics |
| 描述 | P-channel 30 V -0.025 Ω -24 A -DPAK / IPAK STripFET II Power MOSFET |
| 页数 / 页 | 13 / 3 — STD30PF03LT4 - STD30PF03L-1. Electrical characteristics. 2 Electrical. … |
| 文件格式/大小 | PDF / 337 Kb |
| 文件语言 | 英语 |
STD30PF03LT4 - STD30PF03L-1. Electrical characteristics. 2 Electrical. characteristics. Table 4. On/off states. Symbol. Parameter
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STD30PF03LT4 - STD30PF03L-1 Electrical characteristics 2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source breakdown V(BR)DSS I voltage D = 250 µA, VGS= 0 30 V Zero gate voltage drain VDS=Max rating 1 µA IDSS current (VGS = 0) VDS=Max rating,Tc=100 °C 10 µA Gate body leakage current IGSS V (V GS = ±16 V ±100 nA DS = 0) VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 1 V Static drain-source on VGS= 10 V, ID= 12 A 0.025 0.028 Ω RDS(on) resistance VGS= 5 V, ID= 12 A 0.032 0.040 Ω
Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit
g (1) fs Forward transconductance VDS =15 V, ID= 12 A 23 S Input capacitance Ciss 1670 pF Output capacitance C V oss DS =25 V, f=1MHz, VGS=0 345 pF Reverse transfer Crss 120 pF capacitance Q V g Total gate charge DD=15 V, ID = 24 A 18.6 28 nC Qgs Gate-source charge VGS =5 V 5.5 nC Qgd Gate-drain charge Figure 15 11 nC 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed 3/13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On/off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized breakdown voltage vs temperature 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for diode recovery behavior 4 Package mechanical data 5 Packaging mechanical data 6 Revision history Table 8. Document revision history
STD30PF03LT4 - STD30PF03L-1 Electrical characteristics 2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source breakdown V(BR)DSS I voltage D = 250 µA, VGS= 0 30 V Zero gate voltage drain VDS=Max rating 1 µA IDSS current (VGS = 0) VDS=Max rating,Tc=100 °C 10 µA Gate body leakage current IGSS V (V GS = ±16 V ±100 nA DS = 0) VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 1 V Static drain-source on VGS= 10 V, ID= 12 A 0.025 0.028 Ω RDS(on) resistance VGS= 5 V, ID= 12 A 0.032 0.040 Ω
Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit
g (1) fs Forward transconductance VDS =15 V, ID= 12 A 23 S Input capacitance Ciss 1670 pF Output capacitance C V oss DS =25 V, f=1MHz, VGS=0 345 pF Reverse transfer Crss 120 pF capacitance Q V g Total gate charge DD=15 V, ID = 24 A 18.6 28 nC Qgs Gate-source charge VGS =5 V 5.5 nC Qgd Gate-drain charge Figure 15 11 nC 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed 3/13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On/off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized breakdown voltage vs temperature 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for diode recovery behavior 4 Package mechanical data 5 Packaging mechanical data 6 Revision history Table 8. Document revision history