Datasheet STD30PF03LT4, STD30PF03L-1 (STMicroelectronics) - 6

制造商STMicroelectronics
描述P-channel 30 V -0.025 Ω -24 A -DPAK / IPAK STripFET II Power MOSFET
页数 / 页13 / 6 — Electrical characteristics. STD30PF03LT4 - STD30PF03L-1. Figure 8. Gate …
文件格式/大小PDF / 337 Kb
文件语言英语

Electrical characteristics. STD30PF03LT4 - STD30PF03L-1. Figure 8. Gate charge vs gate-source voltage Figure 9

Electrical characteristics STD30PF03LT4 - STD30PF03L-1 Figure 8 Gate charge vs gate-source voltage Figure 9

该数据表的模型线

文件文字版本

Electrical characteristics STD30PF03LT4 - STD30PF03L-1 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature Figure 12. Source-drain diode forward Figure 13. Normalized breakdown voltage vs characteristics temperature
6/13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On/off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized breakdown voltage vs temperature 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for diode recovery behavior 4 Package mechanical data 5 Packaging mechanical data 6 Revision history Table 8. Document revision history