Datasheet STD30PF03LT4, STD30PF03L-1 (STMicroelectronics) - 9
制造商 | STMicroelectronics |
描述 | P-channel 30 V -0.025 Ω -24 A -DPAK / IPAK STripFET II Power MOSFET |
页数 / 页 | 13 / 9 — STD30PF03LT4 - STD30PF03L-1. Package mechanical data. DPAK MECHANICAL … |
文件格式/大小 | PDF / 337 Kb |
文件语言 | 英语 |
STD30PF03LT4 - STD30PF03L-1. Package mechanical data. DPAK MECHANICAL DATA. mm. inch. DIM. MIN. TYP. MAX. TYP
该数据表的模型线
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STD30PF03LT4 - STD30PF03L-1 Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 D1 5.1 0.200 E 6.4 6.6 0.252 0.260 E1 4.7 0.185 e 2.28 0.090 e1 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L 1 0.039 (L1) 2.8 0.110 L2 0.8 0.031 L4 0.6 1 0.023 0.039 R 0.2 0.008 V2 0° 8° 0° 8° 0068772-F 9/13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On/off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized breakdown voltage vs temperature 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for diode recovery behavior 4 Package mechanical data 5 Packaging mechanical data 6 Revision history Table 8. Document revision history