Datasheet MASTERGAN2 (STMicroelectronics)
| 制造商 | STMicroelectronics |
| 描述 | High power density 600V Half bridge driver with two enhancement mode GaN HEMT |
| 页数 / 页 | 29 / 1 — MASTERGAN2. Features. Application. Product status link. Product label. … |
| 文件格式/大小 | PDF / 1.6 Mb |
| 文件语言 | 英语 |
MASTERGAN2. Features. Application. Product status link. Product label. Description. DS13597. Rev 1. November 2020
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MASTERGAN2
Datasheet High power density 600V Half bridge driver with two enhancement mode GaN HEMT
Features
• 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS) – IDS(MAX) = 10 A (LS) + 6.5 A (HS) • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal bootstrap diode • Interlocking function • Dedicated pin for shutdown functionality • Accurate internal timing match • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Overtemperature protection • Bill of material reduction • Very compact and simplified layout • Flexible, easy and fast design.
Application
• Switch-mode power supplies
Product status link
• Chargers and adapters MASTERGAN2 • High-voltage PFC, and DC-DC converters
Product label Description
The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The integrated power GaNs have 650 V drain‑source breakdown voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN2 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN2 operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.
DS13597
-
Rev 1
-
November 2020
www.st.com For further information contact your local STMicroelectronics sales office. Document Outline Features Application Description 1 Block diagram 2 Pin description and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history Contents List of tables List of figures
Datasheet High power density 600V Half bridge driver with two enhancement mode GaN HEMT
Features
• 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration: – QFN 9 x 9 x 1 mm package – RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS) – IDS(MAX) = 10 A (LS) + 6.5 A (HS) • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal bootstrap diode • Interlocking function • Dedicated pin for shutdown functionality • Accurate internal timing match • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Overtemperature protection • Bill of material reduction • Very compact and simplified layout • Flexible, easy and fast design.
Application
• Switch-mode power supplies
Product status link
• Chargers and adapters MASTERGAN2 • High-voltage PFC, and DC-DC converters
Product label Description
The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The integrated power GaNs have 650 V drain‑source breakdown voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN2 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN2 operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.
DS13597
-
Rev 1
-
November 2020
www.st.com For further information contact your local STMicroelectronics sales office. Document Outline Features Application Description 1 Block diagram 2 Pin description and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history Contents List of tables List of figures