Datasheet PUSB3BB2DF (Nexperia)
| 制造商 | Nexperia |
| 描述 | Extremely low clamping low capacitance ESD protection |
| 页数 / 页 | 15 / 1 — PUSB3BB2DF. Extremely low clamping low capacitance ESD protection. 3 … |
| 修订版 | 03112020 |
| 文件格式/大小 | PDF / 1.9 Mb |
| 文件语言 | 英语 |
PUSB3BB2DF. Extremely low clamping low capacitance ESD protection. 3 November 2020. Product data sheet. 1. General description
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PUSB3BB2DF Extremely low clamping low capacitance ESD protection 3 November 2020 Product data sheet 1. General description
Symmetrical bidirectional ElectroStatic Discharge (ESD) protection diode array, part of the TrEOS protection family. This device is housed in a DFN0603-3 (SOT8013) leadless ultra smal Surface- Mounted Device (SMD) package designed to protect two signal lines from the damage caused by ESD and other transients.
2. Features and benefits
• Bidirectional ESD protection of two lines • Very low diode capacitance Cd = 0.26 pF • Extremely low clamping to protect sensitive I/Os • Extremely low-inductance protection path to ground • Extremely symmetrical layout • ESD protection up to ±20 kV according to IEC 61000-4-2 • Ultra small SMD package • Placed on one dif erential line pair, almost no extra PCB space demand for protection
3. Applications
• Thunderbolt, USB 3.2 and HDMI 2.1 data lines • Cellular handsets and accessories • Portable electronics • Communication systems • Computers and peripherals
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standof -4 - 4 V voltage Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.26 - pF f = 1 MHz; VR = 1.5 V; Tamb = 25 °C - 0.24 - pF Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Characteristics 10. Application information 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents
Symmetrical bidirectional ElectroStatic Discharge (ESD) protection diode array, part of the TrEOS protection family. This device is housed in a DFN0603-3 (SOT8013) leadless ultra smal Surface- Mounted Device (SMD) package designed to protect two signal lines from the damage caused by ESD and other transients.
2. Features and benefits
• Bidirectional ESD protection of two lines • Very low diode capacitance Cd = 0.26 pF • Extremely low clamping to protect sensitive I/Os • Extremely low-inductance protection path to ground • Extremely symmetrical layout • ESD protection up to ±20 kV according to IEC 61000-4-2 • Ultra small SMD package • Placed on one dif erential line pair, almost no extra PCB space demand for protection
3. Applications
• Thunderbolt, USB 3.2 and HDMI 2.1 data lines • Cellular handsets and accessories • Portable electronics • Communication systems • Computers and peripherals
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standof -4 - 4 V voltage Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.26 - pF f = 1 MHz; VR = 1.5 V; Tamb = 25 °C - 0.24 - pF Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Characteristics 10. Application information 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents