Datasheet MTP2P50EG (ON Semiconductor) - 5
| 制造商 | ON Semiconductor |
| 描述 | Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 |
| 页数 / 页 | 8 / 5 — MTP2P50EG. Figure 8. Gate−To−Source and Drain−To−Source. Figure 9. … |
| 修订版 | 7 |
| 文件格式/大小 | PDF / 241 Kb |
| 文件语言 | 英语 |
MTP2P50EG. Figure 8. Gate−To−Source and Drain−To−Source. Figure 9. Resistive Switching Time. Voltage versus Total Charge
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MTP2P50EG
12 300 V 1000 TS) DS Q V T , DRAIN‐T DD = 250 V 10 250 ID = 2 A VGS = 10 V VGS TAGE (VOL TJ = 25°C 8 200 O‐SOURCE VOL Q (ns) 1 Q2 6 I 150 100 D = 2 A t, TIME T td(off) J = 25°C tf O‐SOURCE VOL 4 100 TAGE (VOL TE‐T , GA 2 50 t t r d(on) GS TS) V Q3 VDS 0 0 10 0 2 4 6 8 10 12 14 16 18 20 1 10 100 Q R T, TOTAL CHARGE (nC) G, GATE RESISTANCE (OHMS)
Figure 8. Gate−To−Source and Drain−To−Source Figure 9. Resistive Switching Time Voltage versus Total Charge Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS
2 VGS = 0 V TJ = 25°C 1.6 (AMPS) 1.2 0.8 0.4 , SOURCE CURRENT I S 0 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the reliable operation, the stored energy from circuit inductance maximum simultaneous drain−to−source voltage and drain dissipated in the transistor while in avalanche must be less current that a transistor can handle safely when it is forward than the rated limit and adjusted for operating conditions biased. Curves are based upon maximum peak junction differing from those specified. Although industry practice is temperature and a case temperature (TC) of 25°C. Peak to rate in terms of energy, avalanche energy capability is not repetitive pulsed power limits are determined by using the a constant. The energy rating decreases non−linearly with an thermal response data in conjunction with the procedures increase of peak current in avalanche and peak junction discussed in AN569, “Transient Thermal Resistance−General temperature. Data and Its Use.” Although many E−FETs can withstand the stress of Switching between the off−state and the on−state may drain−to−source avalanche at currents up to rated pulsed traverse any load line provided neither rated peak current current (IDM), the energy rating is specified at rated (IDM) nor rated voltage (VDSS) is exceeded and the continuous current (ID), in accordance with industry transition time (tr,tf) do not exceed 10 ms. In addition the total custom. The energy rating must be derated for temperature power averaged over a complete switching cycle must not as shown in the accompanying graph (Figure 12). Maximum exceed (TJ(MAX) − TC)/(RqJC). energy at currents below rated continuous ID can safely be A Power MOSFET designated E−FET can be safely used assumed to equal the values indicated. in switching circuits with unclamped inductive loads. For
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12 300 V 1000 TS) DS Q V T , DRAIN‐T DD = 250 V 10 250 ID = 2 A VGS = 10 V VGS TAGE (VOL TJ = 25°C 8 200 O‐SOURCE VOL Q (ns) 1 Q2 6 I 150 100 D = 2 A t, TIME T td(off) J = 25°C tf O‐SOURCE VOL 4 100 TAGE (VOL TE‐T , GA 2 50 t t r d(on) GS TS) V Q3 VDS 0 0 10 0 2 4 6 8 10 12 14 16 18 20 1 10 100 Q R T, TOTAL CHARGE (nC) G, GATE RESISTANCE (OHMS)
Figure 8. Gate−To−Source and Drain−To−Source Figure 9. Resistive Switching Time Voltage versus Total Charge Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS
2 VGS = 0 V TJ = 25°C 1.6 (AMPS) 1.2 0.8 0.4 , SOURCE CURRENT I S 0 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the reliable operation, the stored energy from circuit inductance maximum simultaneous drain−to−source voltage and drain dissipated in the transistor while in avalanche must be less current that a transistor can handle safely when it is forward than the rated limit and adjusted for operating conditions biased. Curves are based upon maximum peak junction differing from those specified. Although industry practice is temperature and a case temperature (TC) of 25°C. Peak to rate in terms of energy, avalanche energy capability is not repetitive pulsed power limits are determined by using the a constant. The energy rating decreases non−linearly with an thermal response data in conjunction with the procedures increase of peak current in avalanche and peak junction discussed in AN569, “Transient Thermal Resistance−General temperature. Data and Its Use.” Although many E−FETs can withstand the stress of Switching between the off−state and the on−state may drain−to−source avalanche at currents up to rated pulsed traverse any load line provided neither rated peak current current (IDM), the energy rating is specified at rated (IDM) nor rated voltage (VDSS) is exceeded and the continuous current (ID), in accordance with industry transition time (tr,tf) do not exceed 10 ms. In addition the total custom. The energy rating must be derated for temperature power averaged over a complete switching cycle must not as shown in the accompanying graph (Figure 12). Maximum exceed (TJ(MAX) − TC)/(RqJC). energy at currents below rated continuous ID can safely be A Power MOSFET designated E−FET can be safely used assumed to equal the values indicated. in switching circuits with unclamped inductive loads. For
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