Datasheet MTP2N50E (Motorola) - 6
| 制造商 | Motorola |
| 描述 | TMOS E-FET Power Field Effect Transistor - N-Channel Enhancement-Mode Silicon Gate |
| 页数 / 页 | 8 / 6 — SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. Figure 12. … |
| 文件格式/大小 | PDF / 253 Kb |
| 文件语言 | 英语 |
SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. Figure 12. Maximum Avalanche Energy versus. Safe Operating Area
该数据表的模型线
文件文字版本
MTP2N50E
SAFE OPERATING AREA
10 80 V I GS = 20 V D = 2 A SINGLE PULSE TC = 25°C 60 100 µs O–SOURCE (mJ) (AMPS) 1 1 ms 40 10 ms dc 0.1 , DRAIN CURRENT ALANCHE ENERGY V A 20 I D RDS(on) LIMIT , SINGLE PULSE DRAIN–T THERMAL LIMIT PACKAGE LIMIT E AS 0.01 0 0.1 1 10 100 1000 25 50 75 100 125 150 V T DS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) J, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RθJC(t) = r(t) RθJC THERMAL D CURVES APPLY FOR POWER PULSE TRAIN SHOWN 0.02 , NORMALIZED EFFECTIVE t1 READ TIME AT t1 r(t) 0.01 t2 TJ(pk) – TC = P(pk) RθJC(t) TRANSIENT DUTY CYCLE, D = t SINGLE PULSE 1/t2 0.01 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01 t, TIME (ms)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Fifgure 14. Diode Reverse Recovery Waveform
6 Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
10 80 V I GS = 20 V D = 2 A SINGLE PULSE TC = 25°C 60 100 µs O–SOURCE (mJ) (AMPS) 1 1 ms 40 10 ms dc 0.1 , DRAIN CURRENT ALANCHE ENERGY V A 20 I D RDS(on) LIMIT , SINGLE PULSE DRAIN–T THERMAL LIMIT PACKAGE LIMIT E AS 0.01 0 0.1 1 10 100 1000 25 50 75 100 125 150 V T DS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) J, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RθJC(t) = r(t) RθJC THERMAL D CURVES APPLY FOR POWER PULSE TRAIN SHOWN 0.02 , NORMALIZED EFFECTIVE t1 READ TIME AT t1 r(t) 0.01 t2 TJ(pk) – TC = P(pk) RθJC(t) TRANSIENT DUTY CYCLE, D = t SINGLE PULSE 1/t2 0.01 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01 t, TIME (ms)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Fifgure 14. Diode Reverse Recovery Waveform
6 Motorola TMOS Power MOSFET Transistor Device Data