Datasheet 2SA1381, KSA1381 (Fairchild) - 2
| 制造商 | Fairchild |
| 描述 | PNP Epitaxial Silicon Transistor |
| 页数 / 页 | 6 / 2 — 2SA1381/KSA1381 — PNP Ep. Electrical Characteristics*. Symbol. Parameter. … |
| 文件格式/大小 | PDF / 171 Kb |
| 文件语言 | 英语 |
2SA1381/KSA1381 — PNP Ep. Electrical Characteristics*. Symbol. Parameter. Test Condition. Min. Typ. Max. Units. it axial Silico. n T
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文件文字版本
2SA1381/KSA1381 — PNP Ep Electrical Characteristics*
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = - 10µA, IE = 0 - 300 V BVCEO Collecto- Emitter Breakdown Voltage IC = - 1mA, IB = 0 - 300 V BVEBO Emitter-Base Breakdown Voltage IE = - 10µA, IC = 0 - 5 V ICBO Collector Cut-off Current VCB = - 200V, IE = 0 - 0.1 µA IEBO Emitter Cut-off Current VEB = - 4V, IC = 0 - 0.1 µA hFE DC Current Gain VCE = - 10V, IC = - 10mA 40 320 VCE(sat) Collector-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 0.6 V
it axial Silico
VBE(sat) Base-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 1 V fT Current Gain Bandwidth Product VCE = - 30V, IC = - 10mA 150 MHz Cob Output Capacitance VCB = - 30V, f = 1MHz 3.1 pF Cre Reverse Transfer Capacitance VCB = - 30V, f = 1MHz 2.3 pF
n T
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
ransistor Ordering Information Part Number* Marking Package Packing Method Remarks
2SA1381CSTU 2SA1381C TO-126 TUBE hFE1 C grade 2SA1381DSTU 2SA1381D TO-126 TUBE hFE1 D grade 2SA1381ESTU 2SA1381E TO-126 TUBE hFE1 E grade 2SA1381FSTU 2SA1381F TO-126 TUBE hFE1 F grade KSA1381CSTU A1381C TO-126 TUBE hFE1 C grade KSA1381DSTU A1381D TO-126 TUBE hFE1 D grade KSA1381ESTU A1381E TO-126 TUBE hFE1 E grade KSA1381FSTU A1381F TO-126 TUBE hFE1 F grade * 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package. 2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method. © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1381/KSA1381 Rev. A1 2
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = - 10µA, IE = 0 - 300 V BVCEO Collecto- Emitter Breakdown Voltage IC = - 1mA, IB = 0 - 300 V BVEBO Emitter-Base Breakdown Voltage IE = - 10µA, IC = 0 - 5 V ICBO Collector Cut-off Current VCB = - 200V, IE = 0 - 0.1 µA IEBO Emitter Cut-off Current VEB = - 4V, IC = 0 - 0.1 µA hFE DC Current Gain VCE = - 10V, IC = - 10mA 40 320 VCE(sat) Collector-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 0.6 V
it axial Silico
VBE(sat) Base-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 1 V fT Current Gain Bandwidth Product VCE = - 30V, IC = - 10mA 150 MHz Cob Output Capacitance VCB = - 30V, f = 1MHz 3.1 pF Cre Reverse Transfer Capacitance VCB = - 30V, f = 1MHz 2.3 pF
n T
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
ransistor Ordering Information Part Number* Marking Package Packing Method Remarks
2SA1381CSTU 2SA1381C TO-126 TUBE hFE1 C grade 2SA1381DSTU 2SA1381D TO-126 TUBE hFE1 D grade 2SA1381ESTU 2SA1381E TO-126 TUBE hFE1 E grade 2SA1381FSTU 2SA1381F TO-126 TUBE hFE1 F grade KSA1381CSTU A1381C TO-126 TUBE hFE1 C grade KSA1381DSTU A1381D TO-126 TUBE hFE1 D grade KSA1381ESTU A1381E TO-126 TUBE hFE1 E grade KSA1381FSTU A1381F TO-126 TUBE hFE1 F grade * 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package. 2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method. © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1381/KSA1381 Rev. A1 2