Datasheet NVH4L015N065SC1 (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | MOSFET -SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A |
| 页数 / 页 | 8 / 3 — NVH4L015N065SC1. ELECTRICAL CHARACTERISTICS. Parameter. Symbol. Test … |
| 修订版 | 2 |
| 文件格式/大小 | PDF / 372 Kb |
| 文件语言 | 英语 |
NVH4L015N065SC1. ELECTRICAL CHARACTERISTICS. Parameter. Symbol. Test Condition. Min. Typ. Max. Unit. SOURCE−DRAIN DIODE CHARACTERISTICS
该数据表的模型线
文件文字版本
NVH4L015N065SC1 ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified) (continued)
Parameter Symbol Test Condition Min Typ Max Unit SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time tRR VGS = −5/18 V, ISD = 75 A, − 28 − ns dIS/dt = 1000 A/s Reverse Recovery Charge QRR − 234 − nC Reverse Recovery Energy EREC − 23 − J Peak Reverse Recovery Current IRRM − 16 − A Charge time Ta − 17 − ns Discharge time Tb − 11 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com 3
(TJ = 25°C unless otherwise specified) (continued)
Parameter Symbol Test Condition Min Typ Max Unit SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time tRR VGS = −5/18 V, ISD = 75 A, − 28 − ns dIS/dt = 1000 A/s Reverse Recovery Charge QRR − 234 − nC Reverse Recovery Energy EREC − 23 − J Peak Reverse Recovery Current IRRM − 16 − A Charge time Ta − 17 − ns Discharge time Tb − 11 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com 3