Datasheet NTH4L015N065SC1 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A |
| 页数 / 页 | 8 / 2 — NTH4L015N065SC1. THERMAL CHARACTERISTICS. Parameter. Symbol. Max. Unit. … |
| 文件格式/大小 | PDF / 280 Kb |
| 文件语言 | 英语 |
NTH4L015N065SC1. THERMAL CHARACTERISTICS. Parameter. Symbol. Max. Unit. ELECTRICAL CHARACTERISTICS. Test Condition. Min. Typ
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NTH4L015N065SC1 THERMAL CHARACTERISTICS Parameter Symbol Max Unit
Junction−to−Case − Steady State (Note 1) RJC 0.3 °C/W Junction−to−Ambient − Steady State (Note 1) RJA 40
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 650 − − V Drain−to−Source Breakdown Voltage V(BR)DSS/TJ ID = 20 mA, referenced to 25°C − 0.12 − V/°C Temperature Coefficient Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C − − 10 A VDS = 650 V TJ = 175°C − − 1 mA Gate−to−Source Leakage Current IGSS VGS = +18/−5 V, VDS = 0 V − − 250 nA
ON CHARACTERISTICS
(Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 25 mA 1.8 2.5 4.3 V Recommended Gate Voltage VGOP −5 − +18 V Drain−to−Source On Resistance RDS(on) VGS = 15 V, ID = 75 A, TJ = 25°C − 15 − m VGS = 18 V, ID = 75 A, TJ = 25°C − 12 18 VGS = 18 V, ID = 75 A, TJ = 175°C − 16 − Forward Transconductance gFS VDS = 10 V, ID = 75 A − 47 − S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 325 V − 4790 − pF Output Capacitance COSS − 430 − Reverse Transfer Capacitance CRSS − 33 − Total Gate Charge QG(TOT) VGS = −5/18 V, VDS = 520 V, − 283 − nC ID = 75 A Gate−to−Source Charge QGS − 72 − Gate−to−Drain Charge QGD − 64 − Gate−Resistance RG f = 1 MHz − 1.6 −
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(ON) VGS = −5/18 V, − 23 − ns VDS = 400 V, Rise Time tr I − 26 − D = 75 A, RG = 2.2 Turn−Off Delay Time td(OFF) − 49 − inductive load Fall Time tf − 9.6 − Turn−On Switching Loss EON − 167 − J Turn−Off Switching Loss EOFF − 276 − Total Switching Loss Etot − 443 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward ISD VGS = −5 V, TJ = 25°C − − 114 A Current Pulsed Source−Drain Diode Forward ISDM − − 483 Current (Note 2) Forward Diode Voltage VSD VGS = −5 V, ISD = 75 A, TJ = 25°C − 4.8 − V
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NTH4L015N065SC1 THERMAL CHARACTERISTICS Parameter Symbol Max Unit
Junction−to−Case − Steady State (Note 1) RJC 0.3 °C/W Junction−to−Ambient − Steady State (Note 1) RJA 40
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 650 − − V Drain−to−Source Breakdown Voltage V(BR)DSS/TJ ID = 20 mA, referenced to 25°C − 0.12 − V/°C Temperature Coefficient Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C − − 10 A VDS = 650 V TJ = 175°C − − 1 mA Gate−to−Source Leakage Current IGSS VGS = +18/−5 V, VDS = 0 V − − 250 nA
ON CHARACTERISTICS
(Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 25 mA 1.8 2.5 4.3 V Recommended Gate Voltage VGOP −5 − +18 V Drain−to−Source On Resistance RDS(on) VGS = 15 V, ID = 75 A, TJ = 25°C − 15 − m VGS = 18 V, ID = 75 A, TJ = 25°C − 12 18 VGS = 18 V, ID = 75 A, TJ = 175°C − 16 − Forward Transconductance gFS VDS = 10 V, ID = 75 A − 47 − S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 325 V − 4790 − pF Output Capacitance COSS − 430 − Reverse Transfer Capacitance CRSS − 33 − Total Gate Charge QG(TOT) VGS = −5/18 V, VDS = 520 V, − 283 − nC ID = 75 A Gate−to−Source Charge QGS − 72 − Gate−to−Drain Charge QGD − 64 − Gate−Resistance RG f = 1 MHz − 1.6 −
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(ON) VGS = −5/18 V, − 23 − ns VDS = 400 V, Rise Time tr I − 26 − D = 75 A, RG = 2.2 Turn−Off Delay Time td(OFF) − 49 − inductive load Fall Time tf − 9.6 − Turn−On Switching Loss EON − 167 − J Turn−Off Switching Loss EOFF − 276 − Total Switching Loss Etot − 443 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward ISD VGS = −5 V, TJ = 25°C − − 114 A Current Pulsed Source−Drain Diode Forward ISDM − − 483 Current (Note 2) Forward Diode Voltage VSD VGS = −5 V, ISD = 75 A, TJ = 25°C − 4.8 − V
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