Datasheet LT8614 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | 42V, 4A Synchronous Step-Down Silent Switcher with 2.5μA Quiescent Current |
| 页数 / 页 | 24 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply … |
| 修订版 | F |
| 文件格式/大小 | PDF / 1.8 Mb |
| 文件语言 | 英语 |
ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the full operating
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LT8614
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS
VIN Current in Regulation VOUT = 0.97V, VIN = 6V, Output Load = 100µA l 21 50 µA VOUT = 0.97V, VIN = 6V, Output Load = 1mA l 210 350 µA Feedback Reference Voltage VIN = 6V, ILOAD = 0.5A 0.964 0.970 0.976 V VIN = 6V, ILOAD = 0.5A l 0.958 0.970 0.982 V Feedback Voltage Line Regulation VIN = 4.0V to 42V, ILOAD = 0.5A l 0.004 0.02 %/V Feedback Pin Input Current VFB = 1V –20 20 nA INTVCC Voltage ILOAD = 0mA, VBIAS = 0V 3.23 3.4 3.57 V ILOAD = 0mA, VBIAS = 3.3V 3.25 3.29 3.35 V INTVCC Undervoltage Lockout 2.5 2.6 2.7 V BIAS Pin Current Consumption VBIAS = 3.3V, ILOAD = 1A, 2MHz 9 mA Minimum On-Time ILOAD = 1.5A, SYNC = 0V l 15 30 45 ns ILOAD = 1.5A, SYNC = 3.3V l 15 30 45 ns Minimum Off-Time 80 110 ns Oscillator Frequency RT = 221k, ILOAD = 1A l 180 210 240 kHz RT = 60.4k, ILOAD = 1A l 665 700 735 kHz RT = 18.2k, ILOAD = 1A l 1.85 2.00 2.15 MHz Top Power NMOS On-Resistance ISW = 1A 85 mΩ Top Power NMOS Current Limit l 5.7 8.5 10 A Bottom Power NMOS On-Resistance VINTVCC = 3.4V, ISW = 1A 40 mΩ Bottom Power NMOS Current Limit VINTVCC = 3.4V l 4.5 6.9 8.5 A SW Leakage Current VIN = 42V, VSW = 0V, 42V –1.5 1.5 µA EN/UV Pin Threshold EN/UV Rising l 0.94 1.0 1.06 V EN/UV Pin Hysteresis 40 mV EN/UV Pin Current VEN/UV = 2V –20 20 nA PG Upper Threshold Offset from VFB VFB Falling l 6 9.0 12 % PG Lower Threshold Offset from VFB VFB Rising l –6 –9.0 –12 % PG Hysteresis 1.2 % PG Leakage VPG = 3.3V –40 40 nA PG Pull-Down Resistance VPG = 0.1V l 650 2000 Ω SYNC Threshold SYNC Falling 0.8 1.1 1.4 V SYNC Rising 1.6 2.0 2.4 V SYNC Pin Current VSYNC = 6V –40 40 nA TR/SS Source Current l 1.5 2.2 2.9 µA TR/SS Pull-Down Resistance Fault Condition, TR/SS = 0.1V 200 Ω
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings High junction temperatures degrade operating lifetimes. Operating lifetime may cause permanent damage to the device. Exposure to any Absolute is derated at junction temperatures greater than 125°C. Maximum Rating condition for extended periods may affect device
Note 3:
θ values determined per JEDEC 51-7, 51-12. See the Applications reliability and lifetime. Information section for information on improving the thermal resistance.
Note 2:
The LT8614E is guaranteed to meet performance specifications
Note 4:
This IC includes overtemperature protection that is intended to from 0°C to 125°C junction temperature. Specifications over the –40°C protect the device during overload conditions. Junction temperature will to 125°C operating junction temperature range are assured by design, exceed 150°C when overtemperature protection is active. Continuous characterization, and correlation with statistical process controls. The operation above the specified maximum operating junction temperature LT8614I is guaranteed over the full –40°C to 125°C operating junction will reduce lifetime. temperature range. The LT8614H is guaranteed to meet performance specifications from –40°C to 150°C operating junction temperature range. Rev. F For more information www.analog.com 3 Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Order Information Electrical Characteristics Pin Configuration Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Typical Applications Related Parts
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS
VIN Current in Regulation VOUT = 0.97V, VIN = 6V, Output Load = 100µA l 21 50 µA VOUT = 0.97V, VIN = 6V, Output Load = 1mA l 210 350 µA Feedback Reference Voltage VIN = 6V, ILOAD = 0.5A 0.964 0.970 0.976 V VIN = 6V, ILOAD = 0.5A l 0.958 0.970 0.982 V Feedback Voltage Line Regulation VIN = 4.0V to 42V, ILOAD = 0.5A l 0.004 0.02 %/V Feedback Pin Input Current VFB = 1V –20 20 nA INTVCC Voltage ILOAD = 0mA, VBIAS = 0V 3.23 3.4 3.57 V ILOAD = 0mA, VBIAS = 3.3V 3.25 3.29 3.35 V INTVCC Undervoltage Lockout 2.5 2.6 2.7 V BIAS Pin Current Consumption VBIAS = 3.3V, ILOAD = 1A, 2MHz 9 mA Minimum On-Time ILOAD = 1.5A, SYNC = 0V l 15 30 45 ns ILOAD = 1.5A, SYNC = 3.3V l 15 30 45 ns Minimum Off-Time 80 110 ns Oscillator Frequency RT = 221k, ILOAD = 1A l 180 210 240 kHz RT = 60.4k, ILOAD = 1A l 665 700 735 kHz RT = 18.2k, ILOAD = 1A l 1.85 2.00 2.15 MHz Top Power NMOS On-Resistance ISW = 1A 85 mΩ Top Power NMOS Current Limit l 5.7 8.5 10 A Bottom Power NMOS On-Resistance VINTVCC = 3.4V, ISW = 1A 40 mΩ Bottom Power NMOS Current Limit VINTVCC = 3.4V l 4.5 6.9 8.5 A SW Leakage Current VIN = 42V, VSW = 0V, 42V –1.5 1.5 µA EN/UV Pin Threshold EN/UV Rising l 0.94 1.0 1.06 V EN/UV Pin Hysteresis 40 mV EN/UV Pin Current VEN/UV = 2V –20 20 nA PG Upper Threshold Offset from VFB VFB Falling l 6 9.0 12 % PG Lower Threshold Offset from VFB VFB Rising l –6 –9.0 –12 % PG Hysteresis 1.2 % PG Leakage VPG = 3.3V –40 40 nA PG Pull-Down Resistance VPG = 0.1V l 650 2000 Ω SYNC Threshold SYNC Falling 0.8 1.1 1.4 V SYNC Rising 1.6 2.0 2.4 V SYNC Pin Current VSYNC = 6V –40 40 nA TR/SS Source Current l 1.5 2.2 2.9 µA TR/SS Pull-Down Resistance Fault Condition, TR/SS = 0.1V 200 Ω
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings High junction temperatures degrade operating lifetimes. Operating lifetime may cause permanent damage to the device. Exposure to any Absolute is derated at junction temperatures greater than 125°C. Maximum Rating condition for extended periods may affect device
Note 3:
θ values determined per JEDEC 51-7, 51-12. See the Applications reliability and lifetime. Information section for information on improving the thermal resistance.
Note 2:
The LT8614E is guaranteed to meet performance specifications
Note 4:
This IC includes overtemperature protection that is intended to from 0°C to 125°C junction temperature. Specifications over the –40°C protect the device during overload conditions. Junction temperature will to 125°C operating junction temperature range are assured by design, exceed 150°C when overtemperature protection is active. Continuous characterization, and correlation with statistical process controls. The operation above the specified maximum operating junction temperature LT8614I is guaranteed over the full –40°C to 125°C operating junction will reduce lifetime. temperature range. The LT8614H is guaranteed to meet performance specifications from –40°C to 150°C operating junction temperature range. Rev. F For more information www.analog.com 3 Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Order Information Electrical Characteristics Pin Configuration Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Typical Applications Related Parts