Datasheet BUK9V13-40H (Nexperia) - 2
| 制造商 | Nexperia |
| 描述 | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) |
| 页数 / 页 | 13 / 2 — Nexperia. BUK9V13-40H. Dual N-channel 40 V, 13 mOhm logic level MOSFET in … |
| 修订版 | 11022021 |
| 文件格式/大小 | PDF / 313 Kb |
| 文件语言 | 英语 |
Nexperia. BUK9V13-40H. Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration). Symbol
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Nexperia BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Symbol Parameter Conditions Min Typ Max Unit Static characteristics FET1 and FET2
RDSon drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C; 7.9 11.35 13.6 mΩ resistance Fig. 11
Dynamic characteristics FET1 and FET2
QGD gate-drain charge ID = 10 A; VDS = 32 V; VGS = 5 V; - 2.1 4.2 nC Tj = 25 °C; Fig. 13; Fig. 14
Source-drain diode FET1 and FET2
Qr recovered charge IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; [2] - 16.2 - nC VDS = 20 V; Tj = 25 °C [1] 42A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. [2] includes capacitive recovery
5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 S2 source2 8 7 6 5 D1 2 G2 gate2 3 S1 source1 G1 4 G1 gate1 S1, D2 5 D1 drain1 G2 6 D1 drain1 7 S1, D2 source1, drain2 S2 1 2 3 4 aaa-028081 8 S1, D2 source1, drain2
LFPAK56D; Dual LFPAK (SOT1205) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version
BUK9V13-40H LFPAK56D; plastic, single ended surface mounted package (LFPAK56D); 8 SOT1205 Dual LFPAK leads
7. Marking Table 4. Marking codes Type number Marking code
BUK9V13-40H 9V1340H BUK9V13-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 2 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
Nexperia BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Symbol Parameter Conditions Min Typ Max Unit Static characteristics FET1 and FET2
RDSon drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C; 7.9 11.35 13.6 mΩ resistance Fig. 11
Dynamic characteristics FET1 and FET2
QGD gate-drain charge ID = 10 A; VDS = 32 V; VGS = 5 V; - 2.1 4.2 nC Tj = 25 °C; Fig. 13; Fig. 14
Source-drain diode FET1 and FET2
Qr recovered charge IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; [2] - 16.2 - nC VDS = 20 V; Tj = 25 °C [1] 42A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. [2] includes capacitive recovery
5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 S2 source2 8 7 6 5 D1 2 G2 gate2 3 S1 source1 G1 4 G1 gate1 S1, D2 5 D1 drain1 G2 6 D1 drain1 7 S1, D2 source1, drain2 S2 1 2 3 4 aaa-028081 8 S1, D2 source1, drain2
LFPAK56D; Dual LFPAK (SOT1205) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version
BUK9V13-40H LFPAK56D; plastic, single ended surface mounted package (LFPAK56D); 8 SOT1205 Dual LFPAK leads
7. Marking Table 4. Marking codes Type number Marking code
BUK9V13-40H 9V1340H BUK9V13-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 2 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents