Datasheet BDW42G (NPN), BDW46G, BDW47G (PNP) (ON Semiconductor) - 5
| 制造商 | ON Semiconductor |
| 描述 | Darlington Complementary Silicon Power Transistors |
| 页数 / 页 | 8 / 5 — BDW42G (NPN), BDW46G, BDW47G (PNP). BDW42 (NPN). BDW46, 47 (PNP). Figure … |
| 修订版 | 17 |
| 文件格式/大小 | PDF / 239 Kb |
| 文件语言 | 英语 |
BDW42G (NPN), BDW46G, BDW47G (PNP). BDW42 (NPN). BDW46, 47 (PNP). Figure 9. DC Current Gain
该数据表的模型线
文件文字版本
BDW42G (NPN), BDW46G, BDW47G (PNP) BDW42 (NPN) BDW46, 47 (PNP)
20,000 20,000 VCE = 3.0 V VCE = 3.0 V 10,000 10,000 7000 5000 GAIN T T J = 150°C GAIN 5000 J = 150°C 3000 3000 2000 25°C 2000 25°C , DC CURRENT 1000 , DC CURRENT 1000 FEh -55°C FE 500 h 700 -55°C 500 300 300 200 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
3.0 TS) 3.0 TS) TJ = 25°C TJ = 25°C 2.6 TAGE (VOL 2.6 IC = 2.0 A 4.0 A 6.0 A TAGE (VOL IC = 2.0 A 4.0 A 6.0 A 2.2 2.2 1.8 OR-EMITTER VOL 1.8 OR-EMITTER VOL 1.4 1.4 , COLLECT , COLLECT CEV 1.0 CE 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 V 1.00.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
3.0 3.0 T T J = 25°C J = 25°C 2.5 2.5 TS) TS) 2.0 2.0 TAGE (VOL TAGE (VOL VBE(sat) @ IC/IB = 250 , VOL 1.5 , VOL 1.5 VBE @ VCE = 4.0 V V V VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages www.onsemi.com 5
20,000 20,000 VCE = 3.0 V VCE = 3.0 V 10,000 10,000 7000 5000 GAIN T T J = 150°C GAIN 5000 J = 150°C 3000 3000 2000 25°C 2000 25°C , DC CURRENT 1000 , DC CURRENT 1000 FEh -55°C FE 500 h 700 -55°C 500 300 300 200 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
3.0 TS) 3.0 TS) TJ = 25°C TJ = 25°C 2.6 TAGE (VOL 2.6 IC = 2.0 A 4.0 A 6.0 A TAGE (VOL IC = 2.0 A 4.0 A 6.0 A 2.2 2.2 1.8 OR-EMITTER VOL 1.8 OR-EMITTER VOL 1.4 1.4 , COLLECT , COLLECT CEV 1.0 CE 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 V 1.00.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
3.0 3.0 T T J = 25°C J = 25°C 2.5 2.5 TS) TS) 2.0 2.0 TAGE (VOL TAGE (VOL VBE(sat) @ IC/IB = 250 , VOL 1.5 , VOL 1.5 VBE @ VCE = 4.0 V V V VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages www.onsemi.com 5