Datasheet RZM001P02 (Rohm) - 3
| 制造商 | Rohm |
| 描述 | Pch -20V -100mA Small Signal MOSFET |
| 页数 / 页 | 12 / 3 — RZM001P02. Electrical characteristics. Body diode electrical … |
| 文件格式/大小 | PDF / 1.4 Mb |
| 文件语言 | 英语 |
RZM001P02. Electrical characteristics. Body diode electrical characteristics. 20160629 - Rev.001
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RZM001P02
Datasheet l
Electrical characteristics
(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 15.0 - Output capacitance Coss VDS = -10V - 4.0 - pF Reverse transfer capacitance Crss f = 1MHz - 1.5 - Turn - on delay time t *3 d(on) VDD ⋍ -10V,VGS = -4.5V - 46 - Rise time t *3 r ID = -50mA - 62 - ns Turn - off delay time t *3 d(off) RL ⋍ 200Ω - 325 - Fall time t *3 f RG = 10Ω - 137 - l
Body diode electrical characteristics
(Source-Drain) (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Continuous forward current IS - - -100 mA Ta = 25℃ Pulse forward current I *1 SP - - -400 mA Forward voltage V *3 SD VGS = 0V, IS = -100mA - - -1.2 V www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/10
20160629 - Rev.001
Datasheet l
Electrical characteristics
(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 15.0 - Output capacitance Coss VDS = -10V - 4.0 - pF Reverse transfer capacitance Crss f = 1MHz - 1.5 - Turn - on delay time t *3 d(on) VDD ⋍ -10V,VGS = -4.5V - 46 - Rise time t *3 r ID = -50mA - 62 - ns Turn - off delay time t *3 d(off) RL ⋍ 200Ω - 325 - Fall time t *3 f RG = 10Ω - 137 - l
Body diode electrical characteristics
(Source-Drain) (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Continuous forward current IS - - -100 mA Ta = 25℃ Pulse forward current I *1 SP - - -400 mA Forward voltage V *3 SD VGS = 0V, IS = -100mA - - -1.2 V www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/10
20160629 - Rev.001