Datasheet HMC8142 (Analog Devices) - 10
| 制造商 | Analog Devices |
| 描述 | 81 GHz to 86 GHz, E-Band Power Amplifier with Power Detector |
| 页数 / 页 | 16 / 10 — HMC8142. Data Sheet. 580. GAIN (dB) P1dB (dBm). 560. Bm). SAT (dBm). 540. … |
| 修订版 | A |
| 文件格式/大小 | PDF / 319 Kb |
| 文件语言 | 英语 |
HMC8142. Data Sheet. 580. GAIN (dB) P1dB (dBm). 560. Bm). SAT (dBm). 540. , P. 520. N (. mA). B (. , G. 500. I DD. Bm) d. 480. OUT. GAIN. PAE. 460. 440. –15 –13 –11
该数据表的模型线
文件文字版本
HMC8142 Data Sheet 30 28 580 29 GAIN (dB) P1dB (dBm) 24 560 P Bm) 28 SAT (dBm) %) d ( ( 20 AE 540 AT 27 S , P , P B) 26 d 16 520 Bm) N ( d mA) 25 AI ( B ( , G 12 500 I DD 1d 24 , P Bm) d B) 23 ( d 8 480 UT P N ( O OUT 22 P AI GAIN G 4 PAE 460 I 21 DD 0 440 20 –15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
030
350 400 450
027
INPUT POWER (dBm) I
13425-
DD (mA)
13425- Figure 27. Gain, Output P1dB, and PSAT vs. Drain Current (IDD) Figure 30. POUT, Gain, PAE, and IDD vs. Input Power at RF = 81 GHz, at RF = 86 GHz Drain Current (IDD) = 450 mA
28 580 28 580 24 560 24 560 %) ( %) ( 20 AE 540 20 AE 540 , P , P B) d B) 16 520 d 16 520 N ( mA) N ( mA) AI ( AI ( , G 12 500 I DD , G 12 500 I DD Bm) d Bm) ( d 8 480 ( 8 480 UT O UT P P P OUT OUT OP GAIN 4 GAIN 460 4 460 PAE PAE I IDD DD 0 440 0 440 –15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
028
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
031
INPUT POWER (dBm)
13425-
INPUT POWER (dBm)
13425- Figure 28. POUT, Gain, PAE, and IDD vs. Input Power at RF = 83.5 GHz, Figure 31. POUT, Gain, PAE, and IDD vs. Input Power at RF = 86 GHz, Drain Current (IDD) = 450 mA Drain Current (IDD) = 450 mA
28 560 28 560 24 530 24 530 %) %) ( ( 20 AE 500 20 AE 500 , P , P B) B) d 16 470 d 16 470 N ( mA) N ( mA) AI ( AI ( , G 12 440 I DD , G 12 440 I DD Bm) Bm) d d ( 8 410 ( 8 410 UT UT O O P POUT P POUT 4 GAIN 380 4 GAIN 380 PAE PAE IDD IDD 0 350 0 350 –15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
029
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
032
INPUT POWER (dBm)
13425-
INPUT POWER (dBm)
13425- Figure 29. POUT, Gain, PAE, and IDD vs. Input Power at RF = 81 GHz, Figure 32. POUT, Gain, PAE, and IDD vs. Input Power at RF = 83.5 GHz, Drain Current (IDD) = 350 mA Drain Current (IDD) = 350 mA Rev. A | Page 10 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
030
350 400 450
027
INPUT POWER (dBm) I
13425-
DD (mA)
13425- Figure 27. Gain, Output P1dB, and PSAT vs. Drain Current (IDD) Figure 30. POUT, Gain, PAE, and IDD vs. Input Power at RF = 81 GHz, at RF = 86 GHz Drain Current (IDD) = 450 mA
28 580 28 580 24 560 24 560 %) ( %) ( 20 AE 540 20 AE 540 , P , P B) d B) 16 520 d 16 520 N ( mA) N ( mA) AI ( AI ( , G 12 500 I DD , G 12 500 I DD Bm) d Bm) ( d 8 480 ( 8 480 UT O UT P P P OUT OUT OP GAIN 4 GAIN 460 4 460 PAE PAE I IDD DD 0 440 0 440 –15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
028
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
031
INPUT POWER (dBm)
13425-
INPUT POWER (dBm)
13425- Figure 28. POUT, Gain, PAE, and IDD vs. Input Power at RF = 83.5 GHz, Figure 31. POUT, Gain, PAE, and IDD vs. Input Power at RF = 86 GHz, Drain Current (IDD) = 450 mA Drain Current (IDD) = 450 mA
28 560 28 560 24 530 24 530 %) %) ( ( 20 AE 500 20 AE 500 , P , P B) B) d 16 470 d 16 470 N ( mA) N ( mA) AI ( AI ( , G 12 440 I DD , G 12 440 I DD Bm) Bm) d d ( 8 410 ( 8 410 UT UT O O P POUT P POUT 4 GAIN 380 4 GAIN 380 PAE PAE IDD IDD 0 350 0 350 –15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
029
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11
032
INPUT POWER (dBm)
13425-
INPUT POWER (dBm)
13425- Figure 29. POUT, Gain, PAE, and IDD vs. Input Power at RF = 81 GHz, Figure 32. POUT, Gain, PAE, and IDD vs. Input Power at RF = 83.5 GHz, Drain Current (IDD) = 350 mA Drain Current (IDD) = 350 mA Rev. A | Page 10 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE