Datasheet HMC7543 (Analog Devices) - 10
| 制造商 | Analog Devices |
| 描述 | 71 GHz to 76 GHz, E-Band Power Amplifier With Power Detector |
| 页数 / 页 | 16 / 10 — HMC7543. Data Sheet. 545. Bm). 530. ( T. GAIN. ), P. 515. PSAT (dBm). P … |
| 修订版 | A |
| 文件格式/大小 | PDF / 247 Kb |
| 文件语言 | 英语 |
HMC7543. Data Sheet. 545. Bm). 530. ( T. GAIN. ), P. 515. PSAT (dBm). P ,. POUT. d 16. 500. OUTPUT P1dB (dBm). N (. mA). PAE. T P. , G. 485. I DD. IDD. Bm) d. 470. ), OU
该数据表的模型线
文件文字版本
HMC7543 Data Sheet 30 28 545 Bm) 29 d 24 530 ( T GAIN A 28 %) S ( ), P 27 20 515 AE m PSAT (dBm) P , dB B) POUT ( 26 d 16 500 OUTPUT P1dB (dBm) dB N ( 1 25 mA) AI ( PAE T P , G U 12 485 I DD 24 IDD TP Bm) d 23 ( 8 470 ), OU UT O dB 22 P ( GAIN (dB) IN 4 455 21
027 030
GA
13423-
20 0 440
13423-
350 400 450 –15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 IDD (mA) INPUT POWER (dBm)
Figure 27. Gain, Output P1dB, and P Figure 30. Power Compression vs. Input Power, RF = 71 GHz, SAT vs. Drain Current (IDD), RF = 76 GHz Drain Current (IDD) = 450 mA
28 545 28 545 24 530 24 530 GAIN GAIN %) %) ( ( 20 515 20 515 AE AE P P , , POUT B) POUT B) d d 16 500 16 500 N ( N ( mA) mA) AI PAE PAE ( AI ( , G 12 485 I DD , G 12 485 I DD Bm) Bm) d d ( ( 8 470 8 470 UT UT O O P P I I DD DD 4 455 4 455
028 031
0 440
13423-
0 440
13423-
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 –15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 INPUT POWER (dBm) INPUT POWER (dBm)
Figure 28. P Figure 31. P OUT, Gain, PAE, and IDD vs. Input Power, RF = 73.5 GHz, OUT, Gain, PAE, and IDD vs. Input Power, RF = 76 GHz, Drain Current (I Drain Current (I DD) = 450 mA DD) = 450 mA
28 490 28 490 24 470 24 470 %) %) ( GAIN ( GAIN 20 450 20 450 AE AE P P , P , OUT POUT B) B) d d 16 430 16 430 N ( N ( mA) mA) AI PAE PAE ( AI ( , G 12 410 I DD , G 12 410 I DD Bm) Bm) d d ( ( 8 390 8 390 UT UT O I O P DD P IDD 4 370 4 370
029 032
0 350
13423-
0 350
13423-
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 –15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 INPUT POWER (dBm) INPUT POWER (dBm)
Figure 29. P Figure 32. P OUT, Gain, PAE, and IDD vs. Input Power, RF = 71 GHz, OUT, Gain, PAE, and IDD vs. Input Power, RF = 73.5 GHz, Drain Current (I Drain Current (I DD) = 350 mA DD) = 350 mA Rev. A | Page 10 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
027 030
GA
13423-
20 0 440
13423-
350 400 450 –15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 IDD (mA) INPUT POWER (dBm)
Figure 27. Gain, Output P1dB, and P Figure 30. Power Compression vs. Input Power, RF = 71 GHz, SAT vs. Drain Current (IDD), RF = 76 GHz Drain Current (IDD) = 450 mA
28 545 28 545 24 530 24 530 GAIN GAIN %) %) ( ( 20 515 20 515 AE AE P P , , POUT B) POUT B) d d 16 500 16 500 N ( N ( mA) mA) AI PAE PAE ( AI ( , G 12 485 I DD , G 12 485 I DD Bm) Bm) d d ( ( 8 470 8 470 UT UT O O P P I I DD DD 4 455 4 455
028 031
0 440
13423-
0 440
13423-
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 –15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 INPUT POWER (dBm) INPUT POWER (dBm)
Figure 28. P Figure 31. P OUT, Gain, PAE, and IDD vs. Input Power, RF = 73.5 GHz, OUT, Gain, PAE, and IDD vs. Input Power, RF = 76 GHz, Drain Current (I Drain Current (I DD) = 450 mA DD) = 450 mA
28 490 28 490 24 470 24 470 %) %) ( GAIN ( GAIN 20 450 20 450 AE AE P P , P , OUT POUT B) B) d d 16 430 16 430 N ( N ( mA) mA) AI PAE PAE ( AI ( , G 12 410 I DD , G 12 410 I DD Bm) Bm) d d ( ( 8 390 8 390 UT UT O I O P DD P IDD 4 370 4 370
029 032
0 350
13423-
0 350
13423-
–15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 –15 –13 –11 –9 –7 –5 –3 –1 1 3 5 7 9 11 INPUT POWER (dBm) INPUT POWER (dBm)
Figure 29. P Figure 32. P OUT, Gain, PAE, and IDD vs. Input Power, RF = 71 GHz, OUT, Gain, PAE, and IDD vs. Input Power, RF = 73.5 GHz, Drain Current (I Drain Current (I DD) = 350 mA DD) = 350 mA Rev. A | Page 10 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE