GaAs, pHEMT, MMIC, Medium Power Amplifier, 24 GHz to 35 GHz
页数 / 页
15 /10 — HMC1131. Data Sheet. –10. ) B. (d N. –20. Bm). A L. 3 ( P. –30. UT P. SE …
修订版
C
文件格式/大小
PDF / 491 Kb
文件语言
英语
HMC1131. Data Sheet. –10. ) B. (d N. –20. Bm). A L. 3 ( P. –30. UT P. SE I. –40. EVER R. –50. 10dBm. A = +85°C. TA = +25°C. 12dBm. TA = –40°C. 14dBm. –60. 170. 175
HMC1131Data Sheet04035–10) B30(d N–20IOBm)25TdA L3 ( P–30I20SOUT PSE I15UT–40OEVER R10–50T10dBmA = +85°C5TA = +25°C12dBmTA = –40°C14dBm–60024252627282930313233343536 020 170175180185190195200205210215220225 023 FREQUENCY (GHz) 13105- IDD (mA) 13105- Figure 26. Reverse Isolation vs. Frequency at Various Temperatures Figure 29. Output IP3 vs. IDD over POUT/Tone at 30 GHz, VDD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to 50 mA 25252020Bm)1515dB)3 (dP IN ( AIUT10G10INP5510dBm 12dBm 14dBm00170175180185190195200205210215220225 021 170175180185190195200205210215220225 024 IDD (mA)I 13105- DD (mA) 13105- Figure 27. Input IP3 vs. IDD over POUT/Tone at 30 GHz, Figure 30. Gain vs. IDD over POUT/Tone = 14 dBm at 30 GHz, VDD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to 50 mA VDD = 5 V, IDD = 225 mA, IDD2 = Fixed, and IDD1 Varied from 0 mA to50 mA 2.027GHz 28GHz1.830GHz 32GHz)33GHz1.6(W34GHzN IO T1.4PAISSI1.2D ER W1.0PO0.80.6–12–9–6–3–0369 022 INPUT POWER (dBm) 13105- Figure 28. Power Dissipation (PDISS) at 85°C vs. Input Power for Various Frequencies Rev. C | Page 10 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY ELECTRICAL SPECIFICATIONS 24 GHz TO 27 GHz FREQUENCY RANGE 27 GHz TO 35 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION EVALUATION PCB Bill of Materials TYPICAL APPLICATION CIRCUIT OUTLINE DIMENSIONS ORDERING GUIDE