Datasheet HMC633LC4 (Analog Devices) - 4

HMC633LC4
v03.0514
GaAs PHEMT MMIC DRIVER AMPLIFIER, 5.5 - 17 GHz Gain, Power & Output IP3 vs. Gate Voltage @ 11 GHz Absolute Maximum Ratings
35 210 Drain Bias Voltage +5.5V (Vdd1, Vdd2, Vdd3, Vdd4) (dBm) Idd Gate Bias Voltage (Vgg) -3 to 0V T IP3 30 180 RF Input Power (RFIN)(Vdd = +5 Vdc) +5 dBm M (dBm), Idd Channel Temperature 175 °C Psat 25 150 (mA) Continuous Pdiss (T= 85 °C) ), 0.99 W (derate 11.08 mW/°C above 85 °C) S - S (dBm Thermal Resistance 20 120 90.23 °C/W R Gain (channel to package bottom) P1dB P1dB Psat Storage Temperature -65 to +150 °C IE IP3 (dB), 15 90 Operating Temperature -40 to +85 °C GAIN -0.8 -0.78 -0.76 -0.74 -0.72 -0.7 -0.68 LIF Vgg (V) P ELECTROSTATIC SENSITIVE DEVICE M OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vdd
K A Vdd (V) Idd (mA) C 4.5 177 LO 5.0 180 5.5 182 Note: Amplifier will operate over full voltage ranges shown above IN B A R & G E IV R D I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com
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Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r a atio pp n S s u @ p h por ittti : Pte ho.c n o e m : 1-800-ANALOG-D