Datasheet HMC633 (Analog Devices) - 6
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 -17 GHz |
| 页数 / 页 | 8 / 6 — HMC633. GaAs PHEMT MMIC DRIVER. AMPLIFIER, 5 - 17 GHz. Pad Descriptions. … |
| 文件格式/大小 | PDF / 654 Kb |
| 文件语言 | 英语 |
HMC633. GaAs PHEMT MMIC DRIVER. AMPLIFIER, 5 - 17 GHz. Pad Descriptions. 2 - 6
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HMC633
v02.0517
GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 17 GHz Pad Descriptions
Pad Number Function Description Interface Schematic This pad is AC coupled 2 1 RFIN and matched to 50 Ohms. Vdd1, Vdd2, Vdd3, Power Supply Voltage for the amplifier. See assembly 2, 3, 4, 5 IP Vdd4 diagram for required external components. H This pad is AC coupled 6 RFOUT and matched to 50 Ohms. K - C C Gate control for amplifier, please follow “MMIC Ampli- 7 Vgg fier Biasing Procedure” Application Note. See assembly diagram for required external components. LO Die Bottom GND Die bottom must be connected to RF/DC ground. IN B A R & G E IV R S - D R IE LIF P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
2 - 6
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Broadband Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature Power Compression @ 10 GHz Power Compression @ 17 GHz Output IP3 vs. Temperature @ Pin = -15 dBm Noise Figure vs. Temperature Gain & Power vs. Supply Voltage @ 10 GHz Reverse Isolation vs. Temperature Gain, Power & Output IP3 vs. Gate Voltage @ 10 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding
v02.0517
GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 17 GHz Pad Descriptions
Pad Number Function Description Interface Schematic This pad is AC coupled 2 1 RFIN and matched to 50 Ohms. Vdd1, Vdd2, Vdd3, Power Supply Voltage for the amplifier. See assembly 2, 3, 4, 5 IP Vdd4 diagram for required external components. H This pad is AC coupled 6 RFOUT and matched to 50 Ohms. K - C C Gate control for amplifier, please follow “MMIC Ampli- 7 Vgg fier Biasing Procedure” Application Note. See assembly diagram for required external components. LO Die Bottom GND Die bottom must be connected to RF/DC ground. IN B A R & G E IV R S - D R IE LIF P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
2 - 6
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Broadband Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature Power Compression @ 10 GHz Power Compression @ 17 GHz Output IP3 vs. Temperature @ Pin = -15 dBm Noise Figure vs. Temperature Gain & Power vs. Supply Voltage @ 10 GHz Reverse Isolation vs. Temperature Gain, Power & Output IP3 vs. Gate Voltage @ 10 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding