Datasheet HMC-AUH320 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 -86 GHz |
| 页数 / 页 | 6 / 3 — HMC-AUH320. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 71 - 86 GHz. Absolute … |
| 文件格式/大小 | PDF / 357 Kb |
| 文件语言 | 英语 |
HMC-AUH320. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 71 - 86 GHz. Absolute Maximum Ratings. Outline Drawing
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HMC-AUH320
v04.0412
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Absolute Maximum Ratings
Drain Bias Voltage +4.5 Vdc iP Gate Bias Voltage -0.8 to +0.3 Vdc eLeCTrosTaTiC sensiTiVe DeViCe H Thermal resistance oBserVe HanDLinG PreCaUTions 92.1 °C/w (Channel to die bottom) Channel Temperature 180 °C storage Temperature -65 °C to +150 °C s - C operating Temperature -55 °C to +85 °C r Drain Bias Current (idd1) 50ma ie Drain Bias Current (idd2) 100ma Lif P m
Outline Drawing
a r e w o r & P a e Lin noTes:
Die Packaging Information
[1] 1. aLL Dimensions are in inCHes [mm]. standard alternate 2. TYPiCaL BonD PaD is .004” sQUare. 3. BaCKsiDe meTaLLiZaTion: GoLD. GP-2 (Gel Pack) [2] 4. BaCKsiDe meTaL is GroUnD. [1] Refer to the “Packaging Information” section for die 5. BonD PaD meTaLLiZaTion: GoLD. packaging dimensions. 6. ConneCTion noT reQUireD for UnLaBeLeD BonD PaDs. [2] For alternate packaging information contact Hittite 7. oVeraLL Die siZe ±.002” Microwave Corporation. 8. Die THiCKness = .004” Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
3
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v04.0412
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Absolute Maximum Ratings
Drain Bias Voltage +4.5 Vdc iP Gate Bias Voltage -0.8 to +0.3 Vdc eLeCTrosTaTiC sensiTiVe DeViCe H Thermal resistance oBserVe HanDLinG PreCaUTions 92.1 °C/w (Channel to die bottom) Channel Temperature 180 °C storage Temperature -65 °C to +150 °C s - C operating Temperature -55 °C to +85 °C r Drain Bias Current (idd1) 50ma ie Drain Bias Current (idd2) 100ma Lif P m
Outline Drawing
a r e w o r & P a e Lin noTes:
Die Packaging Information
[1] 1. aLL Dimensions are in inCHes [mm]. standard alternate 2. TYPiCaL BonD PaD is .004” sQUare. 3. BaCKsiDe meTaLLiZaTion: GoLD. GP-2 (Gel Pack) [2] 4. BaCKsiDe meTaL is GroUnD. [1] Refer to the “Packaging Information” section for die 5. BonD PaD meTaLLiZaTion: GoLD. packaging dimensions. 6. ConneCTion noT reQUireD for UnLaBeLeD BonD PaDs. [2] For alternate packaging information contact Hittite 7. oVeraLL Die siZe ±.002” Microwave Corporation. 8. Die THiCKness = .004” Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
3
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D