Datasheet HMC-APH596 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 -33 GHz |
| 页数 / 页 | 6 / 1 — HMC-APH596. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 16 - 33 GHz. Typical … |
| 文件格式/大小 | PDF / 301 Kb |
| 文件语言 | 英语 |
HMC-APH596. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 16 - 33 GHz. Typical Applications. Features. Functional Diagram
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HMC-APH596
v02.0208
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Typical Applications Features
This HMC-APH596 is ideal for: Output IP3: +33 dBm • Point-to-Point Radios P1dB: +24 dBm 3 • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 2.55 x 1.87 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH596 is a two stage GaAs HEMT IE MMIC Medium Power Amplifi er which operates IF between 16 and 33 GHz. The HMC-APH596 provides L 17 dB of gain, and an output power of +24 dBm at P 1 dB compression from a +5V supply voltage. All M bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH596 GaAs HEMT MMIC E Medium Power Amplifi er is compatible with conven- W tional die attach methods, as well as thermocomp- O ression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 400 mA
[2] L
A
Parameter Min. Typ. Max. Units Frequency Range 16 - 33 GHz Gain 16 17 dB Input Return Loss 17 dB Output Return Loss 18 dB Output power for 1dB Compression (P1dB) 24 dBm Output Third Order Intercept (IP3) 33 dBm Supply Current (Idd1+Idd2) 400 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd = 400 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 208
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0208
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz Typical Applications Features
This HMC-APH596 is ideal for: Output IP3: +33 dBm • Point-to-Point Radios P1dB: +24 dBm 3 • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 2.55 x 1.87 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH596 is a two stage GaAs HEMT IE MMIC Medium Power Amplifi er which operates IF between 16 and 33 GHz. The HMC-APH596 provides L 17 dB of gain, and an output power of +24 dBm at P 1 dB compression from a +5V supply voltage. All M bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH596 GaAs HEMT MMIC E Medium Power Amplifi er is compatible with conven- W tional die attach methods, as well as thermocomp- O ression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 400 mA
[2] L
A
Parameter Min. Typ. Max. Units Frequency Range 16 - 33 GHz Gain 16 17 dB Input Return Loss 17 dB Output Return Loss 18 dB Output power for 1dB Compression (P1dB) 24 dBm Output Third Order Intercept (IP3) 33 dBm Supply Current (Idd1+Idd2) 400 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd = 400 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 208
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D