Datasheet HMC-APH403 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 45 GHz |
| 页数 / 页 | 6 / 1 — HMC-APH403. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 37 - 45 GHz. Typical … |
| 文件格式/大小 | PDF / 314 Kb |
| 文件语言 | 英语 |
HMC-APH403. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 37 - 45 GHz. Typical Applications. Features. Functional Diagram
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HMC-APH403
v03.0209
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 45 GHz Typical Applications Features
This HMC-APH403 is ideal for: Output IP3: +32 dBm • Point-to-Point Radios P1dB: +23 dBm 3 • Point-to-Multi-Point Radios Gain: 21 dB • Military & Space Supply Voltage: +5V 50 Ohm Matched Input/Output IP Die Size: 2.76 x 1.03 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH403 is a three stage GaAs HEMT MMIC IE Medium Power Amplifi er which operates between IF 37 and 45 GHz. The HMC-APH403 provides 21 dB L of gain, and an output power of +23 dBm at 1 dB P compression from a +5V supply voltage. All bond M pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH403 GaAs HEMT MMIC E Medium Power Amplifi er is compatible with conven- W tional die attach methods, as well as thermocomp- O ression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E
Electrical Specifi cations [1], T = +25° C
IN
A
L
Vdd1=Vdd2=Vdd3= 5V, Idd1+ Idd2 + Idd3= 475 mA [2]
] Parameter Min Typ Max Units Frequency Range 37 - 45 GHz Gain 19 21 dB Input Return Loss 6 dB Output Return Loss 7 dB Output Power for 1 dB Compression (P1dB) 22 23 dBm Output Third Order Intercept (IP3) 32 dBm Supply Current (Idd1 + Idd2 + Idd3) 475 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ -0.5V) to achieve Idd = 475 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 166
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v03.0209
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 45 GHz Typical Applications Features
This HMC-APH403 is ideal for: Output IP3: +32 dBm • Point-to-Point Radios P1dB: +23 dBm 3 • Point-to-Multi-Point Radios Gain: 21 dB • Military & Space Supply Voltage: +5V 50 Ohm Matched Input/Output IP Die Size: 2.76 x 1.03 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH403 is a three stage GaAs HEMT MMIC IE Medium Power Amplifi er which operates between IF 37 and 45 GHz. The HMC-APH403 provides 21 dB L of gain, and an output power of +23 dBm at 1 dB P compression from a +5V supply voltage. All bond M pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH403 GaAs HEMT MMIC E Medium Power Amplifi er is compatible with conven- W tional die attach methods, as well as thermocomp- O ression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E
Electrical Specifi cations [1], T = +25° C
IN
A
L
Vdd1=Vdd2=Vdd3= 5V, Idd1+ Idd2 + Idd3= 475 mA [2]
] Parameter Min Typ Max Units Frequency Range 37 - 45 GHz Gain 19 21 dB Input Return Loss 6 dB Output Return Loss 7 dB Output Power for 1 dB Compression (P1dB) 22 23 dBm Output Third Order Intercept (IP3) 32 dBm Supply Current (Idd1 + Idd2 + Idd3) 475 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ -0.5V) to achieve Idd = 475 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 166
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D