Datasheet HMC-APH196 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 30 GHz |
| 页数 / 页 | 6 / 1 — HMC-APH196. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 17 - 30 GHz. Typical … |
| 文件格式/大小 | PDF / 302 Kb |
| 文件语言 | 英语 |
HMC-APH196. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 17 - 30 GHz. Typical Applications. Features. Functional Diagram
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HMC-APH196
v02.0209
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 30 GHz Typical Applications Features
This HMC-APH196 is ideal for: Output IP3: +31 dBm • Point-to-Point Radios P1dB: +22 dBm 3 • Point-to-Multi-Point Radios Gain: 20 dB @ 20 GHz • VSAT Supply Voltage: +4.5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 3.3 x 1.95 x 0.1 mm H
Functional Diagram General Description
S - C R The HMC-APH196 is a two stage GaAs HEMT MMIC Medium Power Amplifi er which operates IE between 17 and 30 GHz. The HMC-APH196 IF provides 20 dB of gain at 20 GHz, and an output L P power of +22 dBm at 1 dB compression from a +4.5V supply voltage. All bond pads and the die backside M are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. The HMC-APH196 R A GaAs HEMT MMIC Medium Power Amplifi er is E compatible with conventional die attach methods, W as well as thermocompression and thermosonic O wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd1 = Vdd2 = 4.5V, Idd1 + Idd2 = 400 mA
[2] L
A
Parameter Min Typ Max Min Typ Max Min Typ Max Units Frequency Range 17 - 24 24 - 27 27 - 30 GHz Gain 15 20 14 17 11 16 dB Input Return Loss 17 17 17 dB Output Return Loss 25 23 23 dB Output Power for 1 dB Compression (P1dB) 20 22 20 22 20 22 dBm Output Third Order Intercept (IP3) 31 31 31 dBm Supply Current (Idd1 + Idd2) 400 400 400 dBm [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd = 400 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 160
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0209
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 30 GHz Typical Applications Features
This HMC-APH196 is ideal for: Output IP3: +31 dBm • Point-to-Point Radios P1dB: +22 dBm 3 • Point-to-Multi-Point Radios Gain: 20 dB @ 20 GHz • VSAT Supply Voltage: +4.5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 3.3 x 1.95 x 0.1 mm H
Functional Diagram General Description
S - C R The HMC-APH196 is a two stage GaAs HEMT MMIC Medium Power Amplifi er which operates IE between 17 and 30 GHz. The HMC-APH196 IF provides 20 dB of gain at 20 GHz, and an output L P power of +22 dBm at 1 dB compression from a +4.5V supply voltage. All bond pads and the die backside M are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. The HMC-APH196 R A GaAs HEMT MMIC Medium Power Amplifi er is E compatible with conventional die attach methods, W as well as thermocompression and thermosonic O wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd1 = Vdd2 = 4.5V, Idd1 + Idd2 = 400 mA
[2] L
A
Parameter Min Typ Max Min Typ Max Min Typ Max Units Frequency Range 17 - 24 24 - 27 27 - 30 GHz Gain 15 20 14 17 11 16 dB Input Return Loss 17 17 17 dB Output Return Loss 25 23 23 dB Output Power for 1 dB Compression (P1dB) 20 22 20 22 20 22 dBm Output Third Order Intercept (IP3) 31 31 31 dBm Supply Current (Idd1 + Idd2) 400 400 400 dBm [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd = 400 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 160
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D