Datasheet HMC594LC3B (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
| 页数 / 页 | 6 / 1 — HMC594LC3B. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Typical … |
| 文件格式/大小 | PDF / 366 Kb |
| 文件语言 | 英语 |
HMC594LC3B. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Typical Applications. Features. Functional Diagram
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HMC594LC3B
v03.0514
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Typical Applications Features
The HMC594LC3B is ideal for: Gain Flatness: ±0.2 dB T • Fixed Microwave Noise Figure: 3 dB M • Point-to-Multi-Point Radios Gain: 10 dB • Test & Measurement Equipment Output IP3: +36 dBm E - S • Radar & Sensors DC Supply: +5V @ 95mA / +6V @ 100 mA IS • Military & Space 50 Ohm Matched Input/Output O RoHS Compliant 3x3 mm SMT package
Functional Diagram General Description
W N O The HMC594LC3B is a GaAs pHEMT MMIC Low Noise Amplifier (LNA) which operates from 2 to 4 GHz. The HMC594LC3B features extremely flat S - L performance characteristics including 10 dB of small R signal gain, 3 dB of noise figure and output IP3 of IE +36 dBm across the operating band. This high linearity LNA is ideal for test & measurement equipment LIF and military assemblies due to its compact size, P consistent output power and DC blocked RF I/O’s. M The HMC594LC3B is also available in chip form as A the HMC594.
Electrical Specifications, T = +25° C, Vdd = +5V, Idd = 95 mA, Vdd = +6V, Idd = 100mA* A
Parameter Min. Typ. Max. Units Frequency Range 2 - 4 GHz Gain 7 10 dB Gain Variation Over Temperature 0.015 dB/ °C Noise Figure 3 4 dB Input Return Loss 15 dB Output Return Loss 17 dB Output Power for 1 dB 18 21 dBm Compression (P1dB) Saturated Output Power (Psat) 22 dBm Output Third Order Intercept (IP3) 36 dBm Supply Current (Idd) 100 130 mA *Adjust Vgg between -1.5V to -0.5V to achieve Idd = 100mA typical for 6V or Idd = 95mA typical for 5V. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v03.0514
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Typical Applications Features
The HMC594LC3B is ideal for: Gain Flatness: ±0.2 dB T • Fixed Microwave Noise Figure: 3 dB M • Point-to-Multi-Point Radios Gain: 10 dB • Test & Measurement Equipment Output IP3: +36 dBm E - S • Radar & Sensors DC Supply: +5V @ 95mA / +6V @ 100 mA IS • Military & Space 50 Ohm Matched Input/Output O RoHS Compliant 3x3 mm SMT package
Functional Diagram General Description
W N O The HMC594LC3B is a GaAs pHEMT MMIC Low Noise Amplifier (LNA) which operates from 2 to 4 GHz. The HMC594LC3B features extremely flat S - L performance characteristics including 10 dB of small R signal gain, 3 dB of noise figure and output IP3 of IE +36 dBm across the operating band. This high linearity LNA is ideal for test & measurement equipment LIF and military assemblies due to its compact size, P consistent output power and DC blocked RF I/O’s. M The HMC594LC3B is also available in chip form as A the HMC594.
Electrical Specifications, T = +25° C, Vdd = +5V, Idd = 95 mA, Vdd = +6V, Idd = 100mA* A
Parameter Min. Typ. Max. Units Frequency Range 2 - 4 GHz Gain 7 10 dB Gain Variation Over Temperature 0.015 dB/ °C Noise Figure 3 4 dB Input Return Loss 15 dB Output Return Loss 17 dB Output Power for 1 dB 18 21 dBm Compression (P1dB) Saturated Output Power (Psat) 22 dBm Output Third Order Intercept (IP3) 36 dBm Supply Current (Idd) 100 130 mA *Adjust Vgg between -1.5V to -0.5V to achieve Idd = 100mA typical for 6V or Idd = 95mA typical for 5V. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D