Datasheet HMC441LM1 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz |
| 页数 / 页 | 9 / 3 — HMC441LM1. GaAs PHEMT MMIC MEDIUM. POWER AMPLIFIER, 7 - 15.5 GHz. Power … |
| 修订版 | D |
| 文件格式/大小 | PDF / 1.0 Mb |
| 文件语言 | 英语 |
HMC441LM1. GaAs PHEMT MMIC MEDIUM. POWER AMPLIFIER, 7 - 15.5 GHz. Power Compression @ 12 GHz. Output IP3 vs. Temperature
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文件文字版本
HMC441LM1
v04.1019
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Power Compression @ 12 GHz Output IP3 vs. Temperature
30 36 T ) Pout % 25 Gain ( M E PAE 32 A ), P 20 B ) d 28 ( m IN 15 (dB S - S A 3 +25C ), G IP 24 +85C R m 10 -40C B d IE t ( u o 20 5 P LIF 0 16 P -10 -6 -2 2 6 10 6 8 10 12 14 16 18 INPUT POWER (dBm) FREQUENCY (GHz) M
Gain, Power & Output IP3 Gain, Power, Output IP3 & Idd
R A
vs. Supply Voltage @ 12 GHz vs. Gate Voltage @ 12 GHz
E ) 32 ) 210 W 35 m m B B d 30 d O ( 3 3 30 180 28 IP3 ), IP ), IP 26 m m 25 150 Gain B B d 24 P1dB d Psat t ( Psat t ( a a 20 120 Idd s 22 IP3 s ( R & P m ), P ), P 20 15 90 A m m ) Gain A B B 18 d d ( B P1dB 60 E 10 B 16 d d 1 1 14 ), P 5 Idd 30 ), P B B d 12 d LIN ( IN 0 0 IN 10 A A G -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 G 3 3.5 4 4.5 5 5.5 Vgg1, Vgg2 Gate Volltage (V) Vdd Supply Voltage (V)
Noise Figure vs. Temperature Reverse Isolation vs. Temperature
10 0 +25C -10 8 +85C ) -40C B ) +25C d B ( -20 +85C d E ( -40C 6 R N U IO IG -30 T F A L E 4 O IS IS -40 O N 2 -50 0 -60 6 8 10 12 14 16 18 6 8 10 12 14 16 18 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
3
Application Support: Phone: 1-800-ANALOG-D
v04.1019
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Power Compression @ 12 GHz Output IP3 vs. Temperature
30 36 T ) Pout % 25 Gain ( M E PAE 32 A ), P 20 B ) d 28 ( m IN 15 (dB S - S A 3 +25C ), G IP 24 +85C R m 10 -40C B d IE t ( u o 20 5 P LIF 0 16 P -10 -6 -2 2 6 10 6 8 10 12 14 16 18 INPUT POWER (dBm) FREQUENCY (GHz) M
Gain, Power & Output IP3 Gain, Power, Output IP3 & Idd
R A
vs. Supply Voltage @ 12 GHz vs. Gate Voltage @ 12 GHz
E ) 32 ) 210 W 35 m m B B d 30 d O ( 3 3 30 180 28 IP3 ), IP ), IP 26 m m 25 150 Gain B B d 24 P1dB d Psat t ( Psat t ( a a 20 120 Idd s 22 IP3 s ( R & P m ), P ), P 20 15 90 A m m ) Gain A B B 18 d d ( B P1dB 60 E 10 B 16 d d 1 1 14 ), P 5 Idd 30 ), P B B d 12 d LIN ( IN 0 0 IN 10 A A G -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 G 3 3.5 4 4.5 5 5.5 Vgg1, Vgg2 Gate Volltage (V) Vdd Supply Voltage (V)
Noise Figure vs. Temperature Reverse Isolation vs. Temperature
10 0 +25C -10 8 +85C ) -40C B ) +25C d B ( -20 +85C d E ( -40C 6 R N U IO IG -30 T F A L E 4 O IS IS -40 O N 2 -50 0 -60 6 8 10 12 14 16 18 6 8 10 12 14 16 18 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
3
Application Support: Phone: 1-800-ANALOG-D