Datasheet HMC441 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz |
| 页数 / 页 | 8 / 4 — HMC441. GaAs pHEMT MMIC MEDIUM. POWER AMPLIFIER, 6 - 18 GHz. Gain, Power … |
| 文件格式/大小 | PDF / 518 Kb |
| 文件语言 | 英语 |
HMC441. GaAs pHEMT MMIC MEDIUM. POWER AMPLIFIER, 6 - 18 GHz. Gain, Power & Output IP3
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HMC441
v09.0917
GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Gain, Power & Output IP3 Additive Phase Noise Vs Offset Frequency, vs. Gate Voltage @ 12 GHz RF Frequency = 8 GHz, RF Input Power = 5 dBm (P1dB)
) 35 210 m -70 B d ( -80 IP 30 180 3 ), IP H ) -90 25 150 m z B d /H t ( -100 20 120 Idd Bc sa ( (d -110 ), P m 15 90 m A B ) ISE -120 S - C d ( O B 10 60 N d R 1 -130 ), P 5 30 ASE B -140 IE d ( PH IN 0 0 -150 A G -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -160 LIF Vgg1, Vgg2 Gate Voltage (V) P -170 Gain P1dB Psat IP3 10 100 1K 10K 100K 1M M Idd OFFSET FREQUENCY (Hz) R A
Absolute Maximum Ratings Typical Supply Current vs. Vdd
E Drain Bias Voltage (Vdd1, Vdd2) +5.5 Vdc Vdd (V) Idd (mA) W Gate Bias Voltage (Vgg1,Vgg2) -8 to 0 Vdc +4.5 88 O RF Input Power (RFIN)(Vdd = +5Vdc) +20 dBm +5.0 90 Channel Temperature 175 °C +5.5 92 Continuous Pdiss (T= 85 °C) +2.7 80 0.76 W (derate 8.5 mW/°C above 85 °C) +3.0 82 R & P Thermal Resistance A 118 °C/W +3.3 83 (channel to die bottom) E Storage Temperature -65 to +150 °C Note: Amplifier will operate over full voltage ranges shown above Operating Temperature -55 to +85 °C LIN ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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v09.0917
GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Gain, Power & Output IP3 Additive Phase Noise Vs Offset Frequency, vs. Gate Voltage @ 12 GHz RF Frequency = 8 GHz, RF Input Power = 5 dBm (P1dB)
) 35 210 m -70 B d ( -80 IP 30 180 3 ), IP H ) -90 25 150 m z B d /H t ( -100 20 120 Idd Bc sa ( (d -110 ), P m 15 90 m A B ) ISE -120 S - C d ( O B 10 60 N d R 1 -130 ), P 5 30 ASE B -140 IE d ( PH IN 0 0 -150 A G -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -160 LIF Vgg1, Vgg2 Gate Voltage (V) P -170 Gain P1dB Psat IP3 10 100 1K 10K 100K 1M M Idd OFFSET FREQUENCY (Hz) R A
Absolute Maximum Ratings Typical Supply Current vs. Vdd
E Drain Bias Voltage (Vdd1, Vdd2) +5.5 Vdc Vdd (V) Idd (mA) W Gate Bias Voltage (Vgg1,Vgg2) -8 to 0 Vdc +4.5 88 O RF Input Power (RFIN)(Vdd = +5Vdc) +20 dBm +5.0 90 Channel Temperature 175 °C +5.5 92 Continuous Pdiss (T= 85 °C) +2.7 80 0.76 W (derate 8.5 mW/°C above 85 °C) +3.0 82 R & P Thermal Resistance A 118 °C/W +3.3 83 (channel to die bottom) E Storage Temperature -65 to +150 °C Note: Amplifier will operate over full voltage ranges shown above Operating Temperature -55 to +85 °C LIN ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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