Datasheet HMC415LP3, 415LP3E (Analog Devices) - 3

HMC415LP3 / 415LP3E
v03.0605
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Power Compression @ 5.2 GHz Output IP3 vs. Temperature
36 40 32 38 Pout (dBm) Gain (dB) 28 36 PAE (%) 34 24 32 20 30 11 16 28 OIP3 (dBm) 12 +25 C 26 +85 C 8 24 -40 C Pout (dBm), GAIN (dB), PAE (%) T 4 22 0 20 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 4.8 5 5.2 5.4 5.6 5.8 6 INPUT POWER (dBm) FREQUENCY (GHz) - SM S
Noise Figure vs. Temperature Gain & Power vs. Supply Voltage
10 28 9 27 8 26 PLIFIER 7 25 M 6 24 GURE (dB) 5 23 4 22 SE FI 3 21 ER A NOI +25 C 2 20 +85 C Gain W P1dB 1 -40 C Gain (dB), P1dB (dBm), Psat (dBm) 19 Psat O 0 18 4.8 5 5.2 5.4 5.6 5.8 6 2.7 3 3.3 FREQUENCY (GHz) Vcc Supply Voltage (Vdc) & P R A
Reverse Isolation vs. Temperature Power Down Isolation vs. Temperature
E 0 0 LIN +25 C -10 -10 +85 C -40 C +25 C -20 +85 C -20 -40 C -30 -30 ISOLATION (dB) ISOLATION (dB) -40 -40 -50 -50 4.8 5 5.2 5.4 5.6 5.8 6 4.8 5 5.2 5.4 5.6 5.8 6 FREQUENCY (GHz) FREQUENCY (GHz) Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
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