Datasheet HMC8412CHIPS (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | Low Noise Amplifier, 0.4 GHz to 10 GHz |
| 页数 / 页 | 21 / 1 — Low Noise Amplifier,. 0.4 GHz to 10 GHz. Data Sheet. HMC8412CHIPS. … |
| 文件格式/大小 | PDF / 489 Kb |
| 文件语言 | 英语 |
Low Noise Amplifier,. 0.4 GHz to 10 GHz. Data Sheet. HMC8412CHIPS. FEATURES. FUNCTIONAL BLOCK DIAGRAM
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Low Noise Amplifier, 0.4 GHz to 10 GHz Data Sheet HMC8412CHIPS FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.5 dB typical R 2 BIAS 3 VDD Single positive supply (self biased) High gain: ≤15 dB typical HMC8412CHIPS High OIP3: 32 dBm typical VDD: 5 V at IDQ = 60 mA RF 1 4 IN RFOUT 50 Ω matched input and output Die size: 0.945 mm × 1.545 mm × 0.102 mm
001
APPLICATIONS
24012-
Test instrumentation
Figure 1.
Military and space Telecommunications infrastructure Software defined radios Electronic warfare Radar applications GENERAL DESCRIPTION
The HMC8412CHIPS is a gallium arsenide (GaAs), monolithic The HMC8412CHIPS requires 60 mA from a 5 V supply on microwave integrated circuit (MMIC), pseudomorphic high VDD. The HMC8412CHIPS also features inputs and outputs electron mobility transistor (pHEMT), low noise amplifier that (I/Os) that are internal y matched to 50 Ω and facilitates operates from 0.4 GHz to 10 GHz. The HMC8412CHIPS provides integration into multichip modules (MCMs). In addition, the ≤15 dB of typical gain, ≤19 dBm typical output power at 1 dB bias choke to the HMC8412CHIPS and the dc blocking capacitors gain compression (OP1dB), and a typical output third-order on the RFIN and RFOUT pads are integrated, creating a small form intercept (OIP3) of 32 dBm. factor solution.
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. No license is granted by implication or otherwise under any patent or patent rights of Analog Tel: 781.329.4700 ©2020 Analog Devices, Inc. All rights reserved. Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications 0.4 GHz to 8 GHz Frequency Range 8 GHz to 10 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance Electrostatic Discharge (ESD) Ratings ESD Ratings for HMC8412CHIPS ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Small Signal Response Large Signal Response Theory of Operation Applications Information Typical Application Circuit Recommended Bias Sequencing During Power-Up During Power-Down Assembly Diagram Mounting and Bonding Techniques for Millimeter Wave GaAs MMICs Handling Precautions Outline Dimensions Ordering Guide
Low Noise Amplifier, 0.4 GHz to 10 GHz Data Sheet HMC8412CHIPS FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.5 dB typical R 2 BIAS 3 VDD Single positive supply (self biased) High gain: ≤15 dB typical HMC8412CHIPS High OIP3: 32 dBm typical VDD: 5 V at IDQ = 60 mA RF 1 4 IN RFOUT 50 Ω matched input and output Die size: 0.945 mm × 1.545 mm × 0.102 mm
001
APPLICATIONS
24012-
Test instrumentation
Figure 1.
Military and space Telecommunications infrastructure Software defined radios Electronic warfare Radar applications GENERAL DESCRIPTION
The HMC8412CHIPS is a gallium arsenide (GaAs), monolithic The HMC8412CHIPS requires 60 mA from a 5 V supply on microwave integrated circuit (MMIC), pseudomorphic high VDD. The HMC8412CHIPS also features inputs and outputs electron mobility transistor (pHEMT), low noise amplifier that (I/Os) that are internal y matched to 50 Ω and facilitates operates from 0.4 GHz to 10 GHz. The HMC8412CHIPS provides integration into multichip modules (MCMs). In addition, the ≤15 dB of typical gain, ≤19 dBm typical output power at 1 dB bias choke to the HMC8412CHIPS and the dc blocking capacitors gain compression (OP1dB), and a typical output third-order on the RFIN and RFOUT pads are integrated, creating a small form intercept (OIP3) of 32 dBm. factor solution.
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. No license is granted by implication or otherwise under any patent or patent rights of Analog Tel: 781.329.4700 ©2020 Analog Devices, Inc. All rights reserved. Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications 0.4 GHz to 8 GHz Frequency Range 8 GHz to 10 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance Electrostatic Discharge (ESD) Ratings ESD Ratings for HMC8412CHIPS ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Small Signal Response Large Signal Response Theory of Operation Applications Information Typical Application Circuit Recommended Bias Sequencing During Power-Up During Power-Down Assembly Diagram Mounting and Bonding Techniques for Millimeter Wave GaAs MMICs Handling Precautions Outline Dimensions Ordering Guide