Datasheet HMC8412TCPZ-EP (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | Low Noise Amplifier, 0.4 GHz to 11 GHz |
| 页数 / 页 | 10 / 1 — Low Noise Amplifier,. 0.4 GHz to 11 GHz. Enhanced Product. … |
| 文件格式/大小 | PDF / 310 Kb |
| 文件语言 | 英语 |
Low Noise Amplifier,. 0.4 GHz to 11 GHz. Enhanced Product. HMC8412TCPZ-EP. FEATURES. FUNCTIONAL BLOCK DIAGRAM
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Low Noise Amplifier, 0.4 GHz to 11 GHz Enhanced Product HMC8412TCPZ-EP FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.4 dB typical at 0.4 GHz to 3 GHz HMC8412TCPZ-EP Single positive supply (self biased) R 1 6 BIAS VDD High gain: ≤15.5 dB typical GND 2 5 GND High OIP3: ≤33 dBm typical
001
RF 3 4 IN RFOUT RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP
25386- Figure 1.
ENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request APPLICATIONS Test instrumentation Telecommunications Military radar and communication Electronic warfare Aerospace GENERAL DESCRIPTION
The HMC8412TCPZ-EP is a gallium arsenide (GaAs), many Analog Devices, Inc., balanced, inphase and quadrature monolithic microwave integrated circuit (MMIC), (I/Q) or image rejection mixers. pseudomorphic high electron mobility transistor (pHEMT), The HMC8412TCPZ-EP also features inputs and outputs that low noise, wideband amplifier that operates from 0.4 GHz to are internal y matched to 50 Ω, making the device ideal for 11 GHz. surface-mount technology (SMT)-based, high capacity microwave The HMC8412TCPZ-EP provides a typical gain of ≤15.5 dB, a radio applications. typical 1.4 dB noise figure at 0.4 GHz to 3 GHz, and a typical The HMC8412TCPZ-EP is housed in an RoHS compliant, output third-order intercept (OIP3) of ≤33 dBm, requiring only 2 mm × 2 mm, 6-lead LFCSP. 60 mA from a 5 V drain supply voltage. The typical saturated output power (P Additional application and technical information can be found SAT) of ≤20.5 dBm enables the low noise amplifier (LNA) to function as a local oscil ator (LO) driver for in the HMC8412 data sheet.
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. No license is granted by implication or otherwise under any patent or patent rights of Analog Tel: 781.329.4700 ©2020 Analog Devices, Inc. All rights reserved. Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Enhanced Product Features Applications Functional Block Diagram General Description Revision History Specifications 0.4 GHz to 3 GHz Frequency Range 3 GHz to 9 GHz Frequency Range 9 GHz to 11 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance Electrostatic Discharge (ESD) Ratings ESD Ratings for HMC8412TCPZ-EP Power Derating Curves ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Outline Dimensions Ordering Guide
Low Noise Amplifier, 0.4 GHz to 11 GHz Enhanced Product HMC8412TCPZ-EP FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.4 dB typical at 0.4 GHz to 3 GHz HMC8412TCPZ-EP Single positive supply (self biased) R 1 6 BIAS VDD High gain: ≤15.5 dB typical GND 2 5 GND High OIP3: ≤33 dBm typical
001
RF 3 4 IN RFOUT RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP
25386- Figure 1.
ENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request APPLICATIONS Test instrumentation Telecommunications Military radar and communication Electronic warfare Aerospace GENERAL DESCRIPTION
The HMC8412TCPZ-EP is a gallium arsenide (GaAs), many Analog Devices, Inc., balanced, inphase and quadrature monolithic microwave integrated circuit (MMIC), (I/Q) or image rejection mixers. pseudomorphic high electron mobility transistor (pHEMT), The HMC8412TCPZ-EP also features inputs and outputs that low noise, wideband amplifier that operates from 0.4 GHz to are internal y matched to 50 Ω, making the device ideal for 11 GHz. surface-mount technology (SMT)-based, high capacity microwave The HMC8412TCPZ-EP provides a typical gain of ≤15.5 dB, a radio applications. typical 1.4 dB noise figure at 0.4 GHz to 3 GHz, and a typical The HMC8412TCPZ-EP is housed in an RoHS compliant, output third-order intercept (OIP3) of ≤33 dBm, requiring only 2 mm × 2 mm, 6-lead LFCSP. 60 mA from a 5 V drain supply voltage. The typical saturated output power (P Additional application and technical information can be found SAT) of ≤20.5 dBm enables the low noise amplifier (LNA) to function as a local oscil ator (LO) driver for in the HMC8412 data sheet.
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. No license is granted by implication or otherwise under any patent or patent rights of Analog Tel: 781.329.4700 ©2020 Analog Devices, Inc. All rights reserved. Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Enhanced Product Features Applications Functional Block Diagram General Description Revision History Specifications 0.4 GHz to 3 GHz Frequency Range 3 GHz to 9 GHz Frequency Range 9 GHz to 11 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance Electrostatic Discharge (ESD) Ratings ESD Ratings for HMC8412TCPZ-EP Power Derating Curves ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Outline Dimensions Ordering Guide