Datasheet HMC8411LP2FE (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | Low Noise Amplifier, 0.01 GHz to 10 GHz |
| 页数 / 页 | 23 / 1 — Low Noise Amplifier,. 0.01 GHz to 10 GHz. Data Sheet. HMC8411LP2FE. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 554 Kb |
| 文件语言 | 英语 |
Low Noise Amplifier,. 0.01 GHz to 10 GHz. Data Sheet. HMC8411LP2FE. FEATURES. FUNCTIONAL BLOCK DIAGRAM
该数据表的模型线
文件文字版本
Low Noise Amplifier, 0.01 GHz to 10 GHz Data Sheet HMC8411LP2FE FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.7 dB typical HMC8411LP2FE Single positive supply (self biased) TOP VIEW (Not to Scale) High gain: 15.5 dB typical R 1 6 GND High OIP3: 34 dBm typical BIAS 6-lead, 2 mm × 2 mm LFCSP RF 2 5 IN RFOUT/VDD
001
NC 3 4 NC APPLICATIONS
15859-
Test instrumentation
Figure 1.
Military communications GENERAL DESCRIPTION
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic The HMC8411LP2FE also features inputs and outputs that are microwave integrated circuit (MMIC), pseudomorphic high internal y matched to 50 Ω, making the device ideal for surface- electron mobility transistor (pHEMT), low noise wideband mounted technology (SMT)-based, high capacity microwave amplifier that operates from 0.01 GHz to 10 GHz. radio applications. The HMC8411LP2FE provides a typical gain of 15.5 dB, a The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm × 1.7 dB typical noise figure, and a typical output third-order 2 mm, 6-lead LFCSP. intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V Multifunction pin names may be referenced by their relevant supply voltage. The saturated output power (PSAT) of 19.5 dBm function only. typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers.
Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2019 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications 0.01 GHz to 1 GHz Frequency Range 1 GHz to 6 GHz Frequency Range 6 GHz to 10 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Recommended Bias Sequencing During Power-Up During Power-Down Typical Application Circuit Evaluation Board Outline Dimensions Ordering Guide
001
NC 3 4 NC APPLICATIONS
15859-
Test instrumentation
Figure 1.
Military communications GENERAL DESCRIPTION
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic The HMC8411LP2FE also features inputs and outputs that are microwave integrated circuit (MMIC), pseudomorphic high internal y matched to 50 Ω, making the device ideal for surface- electron mobility transistor (pHEMT), low noise wideband mounted technology (SMT)-based, high capacity microwave amplifier that operates from 0.01 GHz to 10 GHz. radio applications. The HMC8411LP2FE provides a typical gain of 15.5 dB, a The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm × 1.7 dB typical noise figure, and a typical output third-order 2 mm, 6-lead LFCSP. intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V Multifunction pin names may be referenced by their relevant supply voltage. The saturated output power (PSAT) of 19.5 dBm function only. typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers.
Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2019 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications 0.01 GHz to 1 GHz Frequency Range 1 GHz to 6 GHz Frequency Range 6 GHz to 10 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Recommended Bias Sequencing During Power-Up During Power-Down Typical Application Circuit Evaluation Board Outline Dimensions Ordering Guide